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Chemical vapor deposition device

A chemical vapor deposition and gas diffusion technology, applied in gaseous chemical plating, metal material coating process, coating and other directions, can solve the problems of uneven distribution density of injected gas, poor process uniformity, etc., to achieve excellent quality, Minimize the effect of thermal expansion deformation

Inactive Publication Date: 2012-03-14
DMS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0009] When the middle part of the shower head 4 sags to bend, the distance between the shower head 4 and the susceptor 2 is closer in the middle part than in the peripheral area, so that the distribution density of the injection gas is not uniform and the process uniformity is deteriorated

Method used

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Embodiment Construction

[0055] Since the present invention is capable of many changes and embodiments, several specific embodiments will be illustrated and described with reference to the accompanying drawings. However, it is by no means intended to limit the present invention to specific embodiments, but it should be understood that the present invention includes all changes, equivalents, and substitutions encompassed by the concept and scope of the present invention. Throughout the description of the present invention, when it is determined that the description of a certain technology will evade the gist of the present invention, the related detailed description will be omitted.

[0056]Terms such as "first" and "second" may be used to describe various elements, but the above elements should not be limited to the above terms. The above terms are only used to distinguish one element from other elements.

[0057] The terms used in the specification are only used to describe specific embodiments, and...

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Abstract

The invention discloses a chemical vapor deposition device, comprising a processing chamber configurated to define a reaction space, a backplane arranged above the reaction space and of which the middle part is equipped with a gas inlet, a gas diffusing component arranged below the gas inlet, separated from the gas inlet, configurated to diffuse a process gas provided by the gas inlet and coupled with the backplane via a first coupling component, a nuzzle arranged below and separated from the backplane and the gas diffusing component, in which a plurality of punched spray orifices are arranged and of which the middle part is coupled with the gas diffusing component via a second coupling component, and a pedestal arranged below the nozzle and separated from the nozzle and used for supporting a substrate.

Description

technical field [0001] The invention relates to a chemical vapor deposition device. Background technique [0002] Methods of forming a thin film on an object can generally be classified into a physical vapor deposition (PVD) method in which a physical collision such as sputtering is used to form a thin film, and a chemical vapor deposition (CVD) method in which a chemical reaction is used to form a thin film. However, since the PVD method has composition or thickness uniformity and step coverage not as good as those of the CVD method, the CVD method is more commonly used. The CVD method includes an APCVD (Atmospheric Pressure CVD) method, an LPCVD (Low Pressure CVD) method, a PECVD (Plasma Enhanced CVD) method, and the like. [0003] Among the CVD methods, the PECVD method has recently been widely used due to its low-temperature deposition and ability to quickly form thin films. The PECVD method is a method of applying RF power to a reaction gas injected into a reaction ch...

Claims

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Application Information

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IPC IPC(8): C23C16/455
CPCC23C16/4586H01L21/0262H01L21/67207H01L21/68714C23C16/45565
Inventor 许闰成朴胜一
Owner DMS CO LTD
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