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Susceptor and apparatus for cvd with the susceptor

A base and equipment technology, applied in gaseous chemical plating, metal material coating process, coating and other directions, can solve problems such as substrate damage

Inactive Publication Date: 2012-03-14
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when the robot directly lifts the substrate, the substrate can be damaged due to sudden temperature changes

Method used

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  • Susceptor and apparatus for cvd with the susceptor
  • Susceptor and apparatus for cvd with the susceptor
  • Susceptor and apparatus for cvd with the susceptor

Examples

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Embodiment Construction

[0021] Example embodiments will now be described in detail, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to like elements throughout. Example embodiments are described below in order to explain the present disclosure by referring to the figures.

[0022] figure 1 A plan view of a susceptor 20 for a chemical vapor deposition (CVD) apparatus 1 according to an example embodiment is shown. figure 2 A cross-sectional view of a susceptor 20 for the CVD apparatus 1 is shown. image 3 show figure 2 A cross-sectional view of the base 20 with the substrate support unit 22 detached is shown in . Figure 4 A bottom perspective view of the substrate support unit 22 is shown.

[0023] refer to Figure 1 to Figure 4 , the CVD apparatus 1 may include a reaction chamber 10 providing a space for performing a chemical reaction, a susceptor 20 mounting at least one substrate (not shown), a heat source 30 heating the susceptor 20 , an...

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Abstract

A susceptor and an apparatus for chemical vapor deposition (CVD) are provided. The susceptor includes a main body configured to include a mounting unit having an uneven plane, and a substrate supporting unit configured to be seated on the mounting unit. A bottom surface of the substrate supporting unit has a shape corresponding to a shape of the mounting unit, and the mounting unit includes a gas discharge hole to discharge gas to the substrate supporting unit. Accordingly, accurate positioning of the substrate supporting unit may not be required when the substrate supporting unit is being returned. Also, the vapor deposition may be stably performed.

Description

[0001] This application claims the benefit of Korean Patent Application No. 10-2010-0076367 filed with the Korean Intellectual Property Office on Aug. 9, 2010, the contents of which are hereby incorporated by reference. technical field [0002] Example embodiments in the following description relate to a susceptor and a chemical vapor deposition (CVD) apparatus having the susceptor. Background technique [0003] A light emitting diode (LED) is a semiconductor device that converts electrical current into light. Manufacturing processes for LEDs include epiwafer manufacturing processes, chip manufacturing processes, packaging processes, and modular processes. [0004] The epitaxial wafer manufacturing process manufactures epitaxial wafers by growing GaN-based crystals on a substrate using metal organic chemical vapor deposition (MOCVD) equipment. [0005] Typically, the substrate is supported by a satellite disc mounted to the base of the MOCVD apparatus. [0006] When separa...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/458
CPCC23C16/4584C23C16/4585C23C16/4586
Inventor 李元伸
Owner SAMSUNG ELECTRONICS CO LTD