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Growth method of sapphire single crystal
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A growth method, sapphire technology, applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., can solve the problem of reducing carrier mobility, carrier lifetime, crystal dislocation density is difficult to control, and a large amount of dislocation density is easy to generate and other problems, to achieve the effect of accelerating crystal growth, large size, and reducing irregular heat convection
Active Publication Date: 2014-04-23
TDG HLDG CO LTD
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Problems solved by technology
The crystal quality grown by the Kyropoulos method (KY method) is good, but there are shortcomings such as low production pass rate and low material utilization rate. Although the heat exchange method (HEM method) has a high degree of automation, it has problems such as high cost and high crystal defects. CZ The method has a high degree of automation and a high material utilization rate, but there are shortcomings such as high crystal dislocation density
[0006] The general CZ method induces heating to grow sapphire crystals. Due to the uneven temperature of the melt in the crucible, the temperature difference is large. It is difficult to control the dislocation density during the crystal growth process, and it is easy to generate a large number of dislocation densities.
[0007] Studies have shown that dislocations in the crystal reduce the mobility of carriers and the lifetime of minority carriers. At the same time, during the device production process, dislocations in the crystal can also cause uneven diffusion junctions, which directly affect the quality of the epitaxial layer. Cause leakage, breakdown, noise, short circuit and other phenomena, and have a significant impact on the performance of opto-electronic devices, acoustic-electronic devices and semiconductor devices such as thermal conductivity
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Embodiment 1～6
[0065] Take the growth of a 4-inch crystal ingot with an outer diameter of 108mm as an example, use 99.999wt% high-purity alumina, place it in an iridium crucible, install alumina, zirconia thermal fields and insulation materials, install thermocouples, close the furnace door and Install the camera, start the monitor and recorder, set the heating program in the automatic control program, the heating rate is 100°C / h, fill in high-purity argon, the flow rate is 8L / min, and heat up to melt the alumina raw material. Start the crucible rotation at the beginning of melting, and conduct tests at the crucible rotation speeds of 1rpm, 2rpm, 3rpm, 4rpm, 5rpm and 6rpm respectively. With the help of an infrared thermometer, the liquid surface temperature is controlled between 2050°C and 2100°C. The convection line is clear and uniform, and reaches a stable state. Slowly lower the seed crystal at a speed of 30mm / h, and start the rotation of the seed crystal at the same time at a speed of 6r...
Embodiment 7
[0067]Take the growth of 4-inch outer diameter 108mm crystal ingot as an example, use 99.999% high-purity alumina, place it in an iridium crucible, install alumina, zirconia thermal field and insulation materials, install thermocouples, close the furnace door and install Start the camera, start the monitor and recorder, set the heating program in the automatic control program, the heating rate is 100°C / h, fill in high-purity argon, the flow rate is 8L / min, heat up to melt the alumina raw material, and the raw material starts Start the crucible rotation when melting, the crucible rotation speed is 3rpm, with the help of infrared thermometer, the liquid surface temperature is controlled between 2050°C and 2100°C, the liquid surface streamline is clear and uniform, and reaches a stable state, and the seed crystal is placed according to Slowly descend at a speed of 30mm / h, and at the same time start the rotation of the seed crystal at a speed of 6rpm, touch the seed crystal to the ...
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Abstract
The invention belongs to a preparation method of sapphire single crystal, and particularly relates to a Czochralski method for preparing sapphire single crystal. The method comprises the following steps of: based on aluminum oxide with high purity (99.999wt%) as a raw material, sequentially carrying out filling, heat filed installation, heating, aluminum oxide melting, Touch, seeding, shouldering, diameter equalizing, ending and cooling stages in the preparation process, wherein a crucible is rotated from the raw material melting stage to the crystal growth finishing and ending stage, or the crucible is rotated from the raw material melting stage to the crystal growth finishing and ending stage and a heating coil is descended from a crystal growth shouldering stage to the crystal growth finishing and ending stage. By the preparation method, the defects of dislocation density, vacancy, bubbles and the like of the sapphire single crystal can be greatly reduced; and the growth process of the sapphire single crystal has beneficial effects by virtue of rotating the crucible and descending the coil.
Description
technical field [0001] The invention belongs to a method for manufacturing a sapphire single crystal, in particular to a pulling method for manufacturing a sapphire single crystal. Background technique [0002] Sapphire has a high melting point (2045°C), high hardness (9 on the Mohs scale, second only to diamond), and good light transmittance (high light transmittance in the ultraviolet, visible, and infrared bands, and transmittance at 3-5 μm Pass rate as high as 85%), strong radiation resistance, high tensile strength, corrosion resistance, high thermal conductivity, good thermal shock resistance and other good properties, becoming the most widely used oxide substrate material, mainly used as a semiconductor Film substrate materials, LED chip substrate materials, large-scale integrated circuit substrates, etc. In addition, sapphire crystal is also an excellent window material and high-quality optical material for infrared military devices, missiles, submarines, satellite ...
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