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Memory element and memory device

A storage element and storage layer technology, applied in electrical elements, information storage, static memory, etc., can solve the problems of flow, address wiring thinning, difficult current, etc., to reduce power consumption, reduce writing Current, the effect of reducing power consumption

Active Publication Date: 2012-04-04
SONY CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0015] However, as the components constituting the MRAM are miniaturized, the address wiring becomes thinner, making it difficult for sufficient current to flow

Method used

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Examples

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Embodiment Construction

[0070] Hereinafter, embodiments of the present invention will be described in the following order.

[0071] 1. Outline of the memory element of the embodiment

[0072] 2. Structure of Embodiment

[0073] 3. Experiment

[0074] 1. Outline of the memory element of the embodiment

[0075] First, an overview of a storage device according to an embodiment of the present invention will be described.

[0076] According to an embodiment of the present invention, recording of information is performed by reversing the magnetization direction of the storage layer of the storage element by the spin injection described above.

[0077] The storage layer is formed of a magnetic material such as a ferromagnetic layer, and holds information by the magnetization state (magnetization direction) of the magnetic material.

[0078] It will be described in detail later, but the memory element has a layer structure (an example of which is in figure 2 ), and includes a memory layer 17 and a magn...

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PUM

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Abstract

The invention discloses a memory element and a memory device. The memory element includes a memory layer that has a magnetization perpendicular to a film face; a magnetization-fixed layer that has a magnetization that is perpendicular to the film face; and an insulating layer that is provided between the memory layer and the magnetization-fixed layer, wherein an electron that is spin-polarized is injected in a lamination direction of a layered structure, and thereby the magnetization direction of the memory layer varies and a recording of information is performed, a magnitude of an effective diamagnetic field which the memory layer receives is smaller than a saturated magnetization amount of the memory layer, and in regard to the insulating layer and the other side layer with which the memory layer comes into contact at a side opposite to the insulating layer, at least an interface that comes into contact with the memory layer is formed of an oxide film.

Description

technical field [0001] The present invention relates to a memory element including a memory layer storing a magnetization state of a ferromagnetic layer as information and a magnetization fixed layer in which a magnetization direction is fixed, and a memory device having a memory element, and the memory layer is changed by causing a current to flow therethrough the magnetization direction. Background technique [0002] In information devices such as computers, high-density DRAMs operating at high speeds have been widely used as random access memories. [0003] However, DRAM is a volatile memory in which information is erased when power is turned off, and thus a nonvolatile memory in which information is not erased is desired. [0004] Furthermore, as a candidate of the nonvolatile memory, a magnetic random access memory (MRAM) in which information is recorded by magnetization of a magnetic material has attracted attention, and thus has been developed. [0005] The MRAM cau...

Claims

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Application Information

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IPC IPC(8): G11C11/16H01L43/08
CPCG11C11/16H01L43/08H01L27/228H01L43/10G11C11/161H10B61/22H10N50/85H10N50/10H10N50/80
Inventor 肥后丰细见政功大森广之别所和宏山根一阳内田裕行
Owner SONY CORP
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