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Storage element and memory device

A storage element and storage layer technology, applied in information storage, static memory, digital memory information, etc., can solve problems such as inability to flow current, and achieve the effects of ensuring thermal stability, eliminating operational errors, and reducing power consumption

Active Publication Date: 2012-04-04
SONY CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0015] However, since the address lines become thinner as the elements constituting the MRAM are reduced, a sufficient amount of current cannot flow

Method used

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Examples

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Embodiment Construction

[0069] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

[0070] Note that descriptions will be given below in the following order:

[0071] 1. Storage element (overview);

[0072] 2. Storage device (embodiment); and

[0073] 3. Experiment.

[0074] 1. Storage element (overview)

[0075] First, an outline of a storage element in a storage device according to an embodiment of the present invention will be described below.

[0076] In the memory element, the magnetization direction of the memory layer of the memory element is reversed by the aforementioned spin injection, thereby recording information in the memory layer.

[0077] The storage layer is made of a magnetic material such as a ferromagnetic layer, and holds information therein based on the magnetization state (magnetization direction) of the magnetic material.

[0078] Although details will be described later, the memory element has figu...

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PUM

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Abstract

The invention discloses a storage element and a memory device. The storage element includes: a storage layer which has magnetization vertical to a film surface and in which a direction of the magnetization is changed in correspondence to information; a magnetization fixing layer which has magnetization vertical to a film surface becoming a reference of the information stored in the storage layer, which is composed of plural magnetic layers, and which has a multilayered ferri-pin structure into which the plural magnetic layers are laminated one upon another through a non-magnetic layer(s); and an insulating layer made of a non-magnetic material and provided between the storage layer and the magnetization fixing layer.

Description

technical field [0001] The present invention relates to a storage element having a storage layer for storing the magnetization state of a ferromagnetic layer as information and a magnetization fixed layer having a magnetization direction fixed therein and adapted to change the magnetization direction of the storage layer by passing a current through the storage layer, And a storage device including the storage element. Background technique [0002] A high-density DRAM (Dynamic Random Access Memory) operating at high speed is generally used as a random access memory in an information device such as a computer. [0003] However, since DRAM is a volatile memory in which information stored therein is erased when power is turned off, a permanent memory in which information stored therein is not erased is expected. [0004] Also, a magnetic random access memory (MRAM) for storing information therein according to the magnetization of a magnetic material has drawn attention as a ca...

Claims

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Application Information

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IPC IPC(8): G11C11/16H01L43/08
CPCG11C11/16H01L43/08H01L43/10G11C11/161G11C11/1675H10N50/85H10N50/10G11C7/04
Inventor 内田裕行细见政功大森广之别所和宏肥后丰山根一阳
Owner SONY CORP
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