Method for reducing semiconductor device hot carrier injection damage
A technology of hot carrier and injection damage, applied in semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problem of easy failure of drain terminals
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[0030] The present invention provides a method for reducing hot carrier injection damage of a semiconductor device, and a semiconductor device fabricated by using the method. In the sidewall etching process, the plasma introduction direction for etching is not perpendicular to the substrate surface, and the plasma introduction direction is inclined from the source end of the gate to the drain end; the plasma introduction direction is not perpendicular to the substrate surface The included angle is greater than 45 degrees and less than 90 degrees.
[0031] 1 and 2, the method for reducing the hot carrier injection damage of a semiconductor device of the present invention and the semiconductor device fabricated by using the method of the present invention are described in detail by taking the manufacture of a 55nm CMOS device as an example, so as to make a better understanding of the present invention, but the following examples do not limit the scope of the present invention. ...
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