Method for enhancing read-in speed of floating body effect storage unit and semiconductor device
A storage unit and writing speed technology, applied in semiconductor/solid-state device manufacturing, electrical components, transistors, etc., can solve problems such as leakage and need to be improved, reduce leakage speed, improve writing speed, and increase substrate current Effect
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[0019] In the usual process, the sidewall formation (deposition and etching) process of the floating body effect memory cell is as follows: Figure 2A-2C shown.
[0020] First, the sidewall material is deposited, and the cross-section of the device after deposition is as follows Figure 2A shown. The floating body effect memory unit in the figure comprises bottom silicon 10, and described bottom silicon 10 is silicon-on-insulator for example; Formed on bottom silicon 10 Buried oxide layer 20; Formed on the substrate 30 of buried oxide layer 20, described The substrate 30 can be a silicon substrate, of course, in some occasions, a germanium substrate, a silicon germanium substrate or other semiconductor materials can also be applied; the shallow trench isolation groove 31 (shallow trench isolation, That is, STI), used to isolate each floating body effect memory cell; a gate oxide layer 41 and a gate 42 formed sequentially on the substrate 30, and a channel in the substrate 30...
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