The invention provides a manufacturing method for enhancing read-in speed of a 
floating body effect storage unit and an intermediate transitional 
semiconductor device, which belong to the technical field of 
semiconductor manufacture. The core of the invention is that: a side 
wall material is deposited, and inclination 
plasma surface processing is conducted on the side 
wall material, so that the surface characteristics of the top of the side 
wall material and the side part close to a source 
electrode of the side wall material are changed, and the side part close to a drain 
electrode of the side wall material is not changed; the side wall material is etched to form a side wall, and the width of the side wall close to the source 
electrode is larger than that of the side wall close to the drain electrode; and the side wall is taken as a 
mask, heavy 
doping and annealing process are conducted to form the source electrode and the drain electrode, the distance between doped 
ion of the drain electrode and a channel is reduced, and the distance between doped 
ion of the source electrode and a liner is increased. In the invention, a longitudinal 
electric field in the channel of the drain electrode is improved on one hand, and the current of the liner is increased, and on the other hand, the leaking speed of accumulated current carriers is reduced from the source electrode, so that the read-in speed of the 
floating body effect storage unit is improved.