Method for improving writing speed of floating body effect storage unit, and floating body effect storage unit

Abstract

The invention provides a manufacturing method for improving the writing speed of a floating body effect storage unit, and the floating body effect storage unit, and belongs to the technical field of semiconductor manufacturing. The invention adopts the core scheme that: a mask layer is formed on a sidewall material which is adjacent to a source, and the sidewall material which is adjacent to a drain is exposed; partial thickness of the exposed sidewall material is etched; the mask layer is removed, and the sidewall material is re-etched, sidewalls are formed on two sides of a gate, and the sidewall which is adjacent to the source is wider than the sidewall which is adjacent to the drain; and by using the sidewalls as masks, heavy doping and annealing processes are performed to form the source and the drain, doped ions of the drain are closer to a channel, and the doped ions of the source are closer to the channel and a substrate. By the invention, a longitudinal electric field in the channel of the drain is improved, and the current of the substrate is improved; moreover, the leakage speed of accumulation carriers from the source is reduced, so that the writing speed of the floating body effect storage unit is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a manufacturing method capable of increasing the writing speed of a floating body effect memory unit and the floating body effect memory unit, thereby improving the writing speed of a dynamic random access memory having the floating body effect memory unit . Background technique [0002] The development of embedded dynamic storage technology has made large-capacity dynamic random access memory (Dynamic Random Access Memory, DRAM) very common in current System on a Chip (SoC). Large-capacity embedded DRAM brings SoC benefits such as improved bandwidth and reduced power consumption that can only be achieved by using embedded technology. In addition to transistors, each storage unit of traditional embedded dynamic random access memory (embbeded Dynamic Random Access Memory, eDRAM) also needs a deep trench capacitor structure. The deep trench of the capacitor mak...

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Problems solved by technology

[0005] When the floating body effect memory cell is writing "1", the carriers will accumulate in the substrate while slowly leaking from the source. The inventor believes that the writing speed of the floating body effect memory cell ("1") has yet to be reached improve

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