Method for increasing writing speed of floating body effect storage unit and semiconductor device

Abstract

The invention provides a method for increasing the writing speed of a floating body effect storage unit and an intermediate transitional semiconductor device, belonging to the technical field of semiconductor manufacturing. The core of the invention is as follows: when a side wall material is deposited, an included angle between the introduction direction of reactant plasma and the surface of a substrate in a source position is less than 90 DEG, and an included angle between the introduction direction of the reactant plasma and the surface of a substrate in a drain position is more than 90 DEG; the side wall material is etched, side walls are formed at two sides of a gate, and the width of the side wall close to a source is more than that of the side wall close to a drain; taking the side walls as masks, heavy doping and annealing processes are carried out to form the source and the drain, and a distance between doped ions of the drain and a channel is closer and a distance between doped ions of the source and the channel as well as the substrate is further. According to the invention, on the one hand, the longitudinal electric field in the drain channel is enhanced and the substrate current is increased, on the other hand, the leakage speed of accumulated carriers from the source is reduced, and therefore the writing speed of the floating body effect storage unit is increased.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a manufacturing method capable of increasing the writing speed of a floating body effect memory unit and an intermediate transition semiconductor device. Background technique [0002] The development of embedded dynamic storage technology has made large-capacity dynamic random access memory (Dynamic Random Access Memory, DRAM) very common in current System on a Chip (SoC). Large-capacity embedded DRAM brings SoC benefits such as improved bandwidth and reduced power consumption that can only be achieved by using embedded technology. In addition to transistors, each storage unit of traditional embedded dynamic random access memory (embbeded Dynamic Random Access Memory, eDRAM) also needs a deep trench capacitor structure. The deep trench of the capacitor makes the height of the storage unit larger than its width. Much larger, causing manufacturing process diffi...

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Problems solved by technology

[0005] When the floating body effect memory cell is writing "1", the carriers will accumulate in the substrate while slowly leaking from the source. The inventor believes that the writing speed of the floating body effect memory cell ("1") has yet to be reached improve

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