49results about How to "Reduce gate current" patented technology

The invention discloses a side wall etching method for reducing heat current carrier injection damage. Ion injection is carried out on a side wall deposition layer by using neutral ions, and the ion injection direction forms an included angle with the direction vertical to a substrate and is inclined towards the source electrode direction, so the etching speed on the side wall above a source electrode region is higher than the etching speed on the side wall above a drain electrode region in the side wall etching process, after etching, the cross section width of the side wall of a source electrode is relatively reduced, and the cross section width of the side wall of a drain electrode is relatively increased. After voltage is applied on a grid electrode, the intensity of a longitudinal electric field generated at the drain terminal is weakened, so electron hole pairs are generated through the collision of current carriers accelerated by a transverse electric field, and the injection into the grid electrode can be realized by holes under the effect of the weak longitudinal electric field, so the grid current formed because of the hot current carrier injection is reduced, and the hot current carrier injection damage of a semiconductor device is reduced.

Present invention relates to a flat-panel display having integrated echelonment trough gate structure and making technology. It contains anode panel and concave cycle glass enclose constructed sealed vacuum cavity, anode panel having photo etched anode conducting layer and phosphor powder layer anode conducting layer, growing carbon nanotube cathode, knee wall structure and getter element, cathode panel having integrated echelonment trough gate structure and reducing whole device operating voltage, at the same time highly integrating signal grid and carbon nanotube cathode, said grid having strong control action to carbon nanotube cathode electron emission. Said invention raises carbon nanotube cathode electron emission efficiency having reliable manufacturing process, simple technology, low cost, and simple structure etc advantages.

The invention relates to a plate display in transverse cathode emission structure and relative production, wherein it comprises an anode glass panel, a cathode glass panel, and a sealing vacuum chamber surrounded by four glass frames; the anode glass panel is arranged with anode conductive layer and a fluorescent powder layer is above the conductive layer; a support wall structure and a gattering additional element are between the anode glass panel and the cathode glass panel; a control grid, a carbon nanometer tube cathode and transverse cathode emission structure are arranged on the cathode glass panel; the carbon nanometer tube cathode is transverse, the grid is at the side of cathode to control the electron emission of cathode to improve the electron emission efficiency and reduce the working voltage, with lower cost and simple structure.

The invention provides a method for reducing the semiconductor device hot carrier injection damage. In a spacer etching process, an inclined angle introduction plasma etching method is adopted, so the spacer width of the drain end after the etching is increased, the spacer width of the source end is decreased, after the subsequent source and drain high doping injection and annealing process, the distance from doped ions of the drain end to a channel is enlarged, the distance from doped ions of the source end to the channel and a substrate is reduced, under the condition of keeping the effective channel length unchanged, and the longitudinal electric field intensity of the drain end is reduced, so the semiconductor device hot carrier injection damage is reduced.

The invention discloses an MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) device and a preparation method, and relates to the field of semiconductor power devices. The anti-static and anti-impact capabilities of the grid electrode can be effectively enhanced, and the purpose of withstand voltage of the device is achieved by using the ESD polycrystalline silicon layer as a mask plate to block the injection of the P-type body region at the periphery. The method comprises the steps that active region grooves are formed in a first conduction type drift layer, a second layer of first conduction type source regions are arranged between the active region grooves and on one sides of the active region grooves, and the active region grooves are located in an MOSFET region; a first layer of second conductive type body region is arranged on the non-doped polycrystalline silicon layer in the MOSFET region; the non-doped polycrystalline silicon layer is arranged above the first conductive type drift layer; a first layer of second conductive type body region and a first layer of first conductive type source region are arranged on the non-doped polycrystalline silicon layer in the ESD region; a first layer of second conductive type body region is arranged on the non-doped polycrystalline silicon layer in the Rg region; and a second layer of second conductive type body region is arranged in the first conductive type drift layer.

The invention relates to a flat-panel display of a inclined-plane flat grid structure and the making process thereof, comprising: sealed vacuum cavity composed of anode glass panel, cathode glass panel, and peripheral glass frame; anode conducting layer on the anode glass panel and fluorescent powder layer prepared on the anode conducting layer; cathode conducting layer, carbon nanotube and inclined-plane flat grid structure on the cathode glass panel; supporting wall structure and degassing agent auxiliary component between the anode glass panel and cathode glass panel, and it can further improve control function of grid, reduce operating voltage of grid, and besides, raise electron emission efficiency and number of emitted electrons of carbon nanotube cathode, and has advantages of stable and reliable making course, simple making process, low making cost, and simple structure.

The flat panel display includes cathode glass faceplate, anode glass faceplate, and sealed vacuum cavity surrounded by glass frame. There are cathode conductive layer, Nano carbon tubes, and polyline with three tips type structures of grid control array on the cathode glass faceplate. There are anode conductive layer and phosphor layers prepared on the conductive layer on anode glass faceplate. Structure of supporting wall and attached elements of getter are located between anode glass faceplate and cathode glass faceplate. The invention reduces working voltage of grid electrode further, decreases interval between grid electrode and cathode so as to be in favor of raising brightness and image quality displayed by the whole apparatus. Advantages are: stable and reliable manufacturing procedure, simple technique and structure, and low cost.

The invention relates to a flat-panel display of a side grid-controlled circular truncated cone surface cathode emission structure and the making process thereof, comprising: sealed vacuum cavity composed of anode glass panel, cathode glass panel, and peripheral glass frame; anode conducting layer on the anode glass panel and fluorescent powder layer prepared on the anode conducting layer; supporting wall structure and degassing agent auxiliary component between the anode glass panel and cathode glass panel; and cathode lead layer, carbon nanotube and side grid-controlled circular truncated cone surface cathode emission structure on the cathode glass panel; and it can further improve whole display brightness, image quality and resolution and has advantages of stable and reliable making course, simple making process, low making cost, and simple structure.

This invention relates to one gear grating control plane display process, which comprises the following parts: cathode glass panel, cathode glass panel and circle glass frame to form sealed vacuum chamber; fluorescence layer on anode electrode layer with anode conductive layer on anode glass panel; supportive wall structure and air detrained assistant elements between anode glass panel and cathode glass panel; control grating electrode, carbon nanometer tube cathode and emission structure on cathode glass panel.