92results about How to "Strong electric field strength" patented technology

The invention provides a surface plasma effect based InGaAs optical detector allowing absorption enhancement. The surface plasma effect based InGaAs optical detector allowing absorption enhancement comprises a semiconductor substrate and a buffer layer, a lower doping layer, an absorption layer and an upper doping layer which are sequentially deposited on the semiconductor substrate and a metal grating layer which is formed in the upper doping layer; the metal grating layer is the two-dimensional periodical sub-wavelength optical grating; incident optical waves enters into from one semiconductor side with no thin film deposited on; two electrodes of the InGaAs infrared optical detector are connected electrically with the lower doping layer and the upper doping layer; additional bias voltage is introduced through the two electrodes; detected signals are collected through the two electrodes. According to the surface plasma effect based InGaAs optical detector allowing absorption enhancement, a two-dimensional periodical metal hole array structure can be in coupling with detected optical waves to simulate the surface plasma effect, the surface plasma effect can localize light fields at positions close to metal and semiconductor interfaces, and the lost detection rate of the thinned absorbing layer is recovered.

This invention relates to a flat display of slant grid-control structure and its manufacturing method including a closed vacuum cavity composed of an anode glass panel, a cathode glass panel and glass frame around it, in which, an anode conductive layer is set on the anode glass panel and a fluorescent powder layer is prepared on the anode conductive layer, a supporting wall structure and attached elements of a getter is set between the anode glass panel and the cathode glass panel, a grid lead layer, carbon nanometer tubes and a slant grid-control structure are set on the cathode glass panel to control efficiency of the grid structure and increase the electronic emission efficiency and quantity to increase image quality of the device.

The invention discloses a molecular sieve material loaded with a bismuth titanate photocatalyst and a preparation method of the molecular sieve material. The method is characterized by comprising the following steps: loading the bismuth titanate photocatalyst on a molecular sieve subjected to ion exchange with hydrochloric acid by a sol-gel method. According to organic matter adsorbed by the molecular sieve material disclosed by the invention, free active genes can be easily obtained, so that the catalyst activity is improved.

The invention discloses a manufacturing method of magnetic CoFe2O4/MCM-41/TiO2 composite materials and relates to a manufacturing method of composite materials. The technical problem that an existing photocatalyst is narrow in response range, low in photocatalytic performance and difficult to recycle is solved. The method comprises the steps that first, CoFe2O4 is manufactured; second, CoFe2O4/MCM-41 is manufactured; and third, CoFe2O4/MCM-41/TiO2 is manufactured. TiO2 particles loaded in an MCM-41 hole channel and on the surface of the MCM-41 hole channel generate electron-hole pairs under the condition of UV irradiation, strong electric field intensity is achieved in the MCM-41 hole channel, electrons are gathered on the surface of the MCM-41 hole channel, accordingly, the effect of electron-hole pair combination is restrained, organic matter adsorbed by MCM-41 can obtain free active groups easily, and therefore the photocatalytic activity of the photocatalyst is improved. The method belongs to the field of photocatalytic material manufacturing.

The invention relates to a flat-panel display of a high grid-controlled multi-edge cathode structure and the making process thereof, comprising: sealed vacuum cavity composed of anode glass panel, cathode glass panel, and peripheral glass frame; anode conducting layer on the anode glass panel and fluorescent powder layer prepared on the anode conducting layer; cathode conducting layer, carbon nanotube and high grid-controlled multi-edge cathode structure on the cathode glass panel; supporting wall structure and degassing agent auxiliary component between the anode glass panel and cathode glass panel, and it can further improve control function and efficiency of grid structure, raise electron emission efficiency of carbon nanotube cathode, and helps to improve display brightness, and has advantages of stable and reliable making course, simple making process, low making cost, and simple structure.

The flat panel display includes cathode glass faceplate, anode glass faceplate, and sealed vacuum cavity surrounded by glass frame. There are cathode conductive layer, Nano carbon tubes, and arc type structure of grid electrode control array on the cathode glass faceplate. There are anode conductive layer and phosphor layers prepared on the conductive layer on anode glass faceplate. Structure of supporting wall and attached elements of getter are located between anode glass faceplate and cathode glass faceplate. The invention shortens gap between structure of grid electrode and structure of cathode of Nano carbon tubes further, reduces working voltage of grid electrode structure, and enhances control function of grid electrode so as to be in favor of raising display brightness of apparatus further. Advantages are: stable and reliable manufacturing procedure, simple technique and structure, and low cost.

The invention discloses an N-type Laterally Diffused Metal Oxide Semiconductor (NLDMOS) device including the following steps that: a field oxide is formed above a drift region, a second side of the drift region field oxide is in lateral contact with a drain region; a first side of the drift region field oxide is arranged at the bottom of a polycrystalline silicon gate, and the first side of the drift region field oxide and a P well are separated by a distance; part of the field oxide at a top region of the first side of the drift region field oxide is removed, and the region where the field oxide is removed is filled with a substitute dielectric layer which has a character that the capacity for blocking ion implantation of the substitute dielectric layer is larger than that of the field oxide or a relative dielectric constant of the substitute dielectric layer is larger than that of the field oxide; and by using the character of the large capacity for blocking the ion implantation, the substitute dielectric layer makes a doping concentration of the drift region at the bottom of the first side of the drift region field oxide lower, thereby improving a breakdown voltage of the NLDMOS device, and by using the character of the large relative dielectric constant, the substitute dielectric layer makes the electric field strength at the bottom of the first side of the drift region field oxide reduce, thereby improving the breakdown voltage of the NLDMOS device. The invention also discloses a manufacture method of the NLDMOS device.

The invention discloses a circumferential dual-concave surface negative-electrode reinforcement arc straight-slope grating-structure light-emitting backlight source. The light-emitting backlight source comprises a vacuum enclosed body and a getter auxiliary component, wherein the getter auxiliary component is arranged in the vacuum enclosed body, the vacuum enclosed boy comprises a front hard transmitting glass plate, a rear hard transmitting glass plate and a glass narrow frame strip, a positive electrode light transmitting conductive layer, a positive electrode disc silver wire bending layerand a thin light-emitting layer, the positive electrode light transmitting conductive layer is connected with the positive electrode disc silver wire bending layer, the thin light-emitting layer is fabricated on the positive electrode light transmitting conductive layer, and a circumferential dual-concave surface negative-electrode reinforcement arc straight-slope grating structure is arranged onthe rear hard transmitting glass plate. The light-emitting backlight source has the advantages of stable and reliability fabrication structure and high light-emitting brightness.

A preparation method of a composite molecular sieve material with a photocatalysis performance is characterized in that the method comprises the following steps: carrying out ion exchange on Y, X or ZSM-5 molecular sieve by hydrochloric acid, and loading a TiO2 photocatalyst on the obtained molecular sieve through a sol-gel process. The composite molecular sieve material can inhibit electron-hole pair recombination to make organic matters adsorbed on the molecular sieve easily obtain free active groups in order to improve the photocatalytic activity of the photocatalyst.

The invention discloses an organic solid laser based on a metal nano core-shell structure-metal film plasma composite structure. The organic solid laser comprises a substrate, a metal film layer, a core-shell structure layer and a gain dielectric layer which are sequentially stacked. The metal film layer is a metal film capable of generating a non-local surface plasma effect SPP. A shell layer material in the core-shell structure layer is an isolation medium material, and a central core material is first metal nanoparticles capable of realizing a localized surface plasma effect LSPR. The shelllayer of the core-shell structure is ingeniously used as the isolation layer, the distance between the LSPR and the SPP is regulated and controlled by changing the thickness of the shell layer, coupling between the LSPR and the SPP is achieved, then a strong local electric field is generated, the structure is simpler, and the preparation method is simpler and more convenient.

The invention relates to a plate display in annular blade cathode emission structure and relative production, wherein it comprises an anode glass panel, a cathode glass panel, and a sealing vacuum chamber surrounded by four glass frames; the anode glass panel is arranged with anode conductive layer and a fluorescent powder layer is above the conductive layer; a support wall structure and a gattering additional element are between the anode glass panel and the cathode glass panel; a control grid, a carbon nanometer tube cathode and annular blade cathode emission structure are arranged on the cathode glass panel. The invention can effectively utilize the phenomenon that the edge position emits lots of electrons, improve the electron emission efficiency of cathode, and improve the display brightness of device, with lower cost and simple structure.

The invention relates to a lower grid-structured flat light-emitting display and the making process thereof, comprising a sealed vacuum cavity composed of a front glass panel, a rear glass panel and glass frames, a supporting wall structure and auxiliary degassing agent components. The rear glass panel is provided with an insulating heightening layer, anode pixel holes are preset on the insulating heightening layer, an anode electrode layer is arranged in the anode pixel holes, a fluorescent powder layer is arranged on the anode electrode layer, a control grid electrode layer is arranged on the insulating heightening layer, an insulating isolating layer is arranged on the control grid electrode layer, a cathode electrode layer is arranged on the insulating isolating layer and carbon nanotube cathodes are prepared on the cathode electrode layer. The invention has the advantages of low cost, simple structure, high making yield, stable and reliable lower grid structure.

The invention relates to a flat-panel display of an annular vertical- plane grid-controlled cathode structure and the making process thereof, comprising: sealed vacuum cavity composed of anode glass panel, cathode glass panel, and peripheral glass frame; anode conducting layer on the anode glass panel and fluorescent powder layer prepared on the anode conducting layer; supporting wall structure and degassing agent auxiliary component between the anode glass panel and cathode glass panel; and grid lead layer, carbon nanotube and annular vertical- plane grid-controlled cathode structure on the cathode glass panel; and it can further improve whole display brightness, resolution and image quality and has advantages of stable and reliable making course, simple making process, low making cost, and simple structure.

Present invention relates to a flat-panel display having integrated echelonment trough gate structure and making technology. It contains anode panel and concave cycle glass enclose constructed sealed vacuum cavity, anode panel having photo etched anode conducting layer and phosphor powder layer anode conducting layer, growing carbon nanotube cathode, knee wall structure and getter element, cathode panel having integrated echelonment trough gate structure and reducing whole device operating voltage, at the same time highly integrating signal grid and carbon nanotube cathode, said grid having strong control action to carbon nanotube cathode electron emission. Said invention raises carbon nanotube cathode electron emission efficiency having reliable manufacturing process, simple technology, low cost, and simple structure etc advantages.

The invention discloses a light-emitting backlight source for a single-ring pyramid inclined plane cathode concave straight arc section gating structure. The light-emitting backlight source comprisesa vacuum sealing body and getter auxiliary elements located in the vacuum sealing body. The vacuum sealing body is composed of a front transparent hard glass plate, a rear transparent hard glass plateand narrow glass frame strips. An anode low-resistance membrane electric layer, an anode gray silver external connection layer and a thin light-emitting layer are arranged on the front hard glass plate, the anode low-resistance membrane electric layer is connected with the anode gray silver external connection layer, and the thin light-emitting layer is manufactured on the anode low-resistance membrane electric layer; and a single-ring pyramid inclined plane cathode concave straight arc section gating structure is arranged on the rear hard glass plate. The light-emitting backlight source hasthe advantages of being stable and reliable in manufacturing process and excellent in light-emitting brightness adjustability.

The invention relates to a flat-panel display of a suspended annular cathode structure and the making process thereof, comprising: sealed vacuum cavity composed of anode glass panel, cathode glass panel, and peripheral glass frame; anode conducting layer on the anode glass panel and fluorescent powder layer prepared on the anode conducting layer; cathode conducting layer, carbon nanotube and suspended annular cathode structure on the cathode glass panel; supporting wall structure and degassing agent auxiliary component between the anode glass panel and cathode glass panel, and it can further raise electron emission efficiency of carbon nanotube cathode and number of emitted electrons, reduce operating voltage of grid, improve control function of grid structure, helps to improve display brightness, and has advantages of stable and reliable making course, simple making process, low making cost, and simple structure.

The invention relates to a plate display in transverse cathode emission structure and relative production, wherein it comprises an anode glass panel, a cathode glass panel, and a sealing vacuum chamber surrounded by four glass frames; the anode glass panel is arranged with anode conductive layer and a fluorescent powder layer is above the conductive layer; a support wall structure and a gattering additional element are between the anode glass panel and the cathode glass panel; a control grid, a carbon nanometer tube cathode and transverse cathode emission structure are arranged on the cathode glass panel; the carbon nanometer tube cathode is transverse, the grid is at the side of cathode to control the electron emission of cathode to improve the electron emission efficiency and reduce the working voltage, with lower cost and simple structure.

The invention discloses a novel discharge module based on surface catalytic film enhanced ozone synthesis. The novel discharge module comprises a discharge unit package board, a venting element I sleeving an air inlet end of the discharge unit package board and a venting element II sleeving a gas outlet end of the discharge unit package board. The discharge unit package board comprises a sealing plate I and a sealing plate II. The lower surface of the sealing plate I is provided with a groove I. The upper surface of the sealing plate II is provided with a groove II corresponding to the grooveI. The groove I is opposite to the groove II. The sealing plate I and the sealing plate II are bonded through tops of groove walls of the groove I and the groove II. A discharge unit is arranged in aspace formed from the groove I and the groove II. A semiconductor film is electroplated on the lower surface of a dielectric plate 1 with a sheet metal electrode and/or the surface of a grid-shaped metal electrode, and in oxygen-containing gas as a gas source, the ozone synthesis is further promoted through a series of heterogeneous reactions in contact with plasma because of a large specific surface area.