Hall device error compensation circuit

Abstract

The invention relates to a Hall device error compensation circuit, which comprises a constant alternating current source 1, an inductor 2, a wire wound inductor 3, a corrected resistor 4, a load resistor 5, a Hall device 6, an inductor 7, a wire wound inductor 8, a transformer 9, a resistor 10, an amplifier 11 and a grounding terminal 12. The circuit is connected with the load resistor 5 in parallel to compensate temperature error, and adopts a compensation device coupling inductor formed by the inductor 2 and the wire wound inductor 3 to enable the temperature error to reach the optimum effect; and in addition, a coupling inductor comprising the inductor 7 and the wire wound inductor 8 is connected onto an excitation end and an output end of the Hall device 6 in parallel to compensate zero error of the Hall device 6, so that an inequipotential electric potential is minimized. The circuit provided by the invention is simple, has good time response, and automatically compensate temperature drift and the zero error of the Hall device carrying out magnetic field detection, so that the compensation is more accurate and reliable.

Description

technical field [0001] The invention relates to a Hall device error compensation circuit, in particular to an error compensation circuit for detecting magnetic fields in an ion implanter for manufacturing semiconductor devices. Background technique [0002] With the increasing integration of semiconductor devices, the wafer size is getting bigger and bigger, and the unit device size is getting smaller and smaller, which puts forward higher requirements for various semiconductor process equipment. In an ion implanter, the ions generated by the ion source through discharge are mixed ions of various ions. The ions implanted into the wafer require a single pure ion, so the required ion species must be sorted out. The sorting principle is to use the Luotian magnetic force, that is, the trajectory (R) of the charged particles in the constant magnetic field (B) and the mass of the charged particles (m), the energy of the charged particles (E) and the number of charges satisfy the ...

AI Technical Summary

Problems solved by technology

Since the resistivity, mobility and carrier concentration of the Hall device material change with the temperature, the performance parameters of the Hall device must change with the temperature, resulting in a change in the Hall potential and a temperature error; The Hall electrodes are symmetrically welded on both sides of the Hall device, so that the two electrode points cannot be completely located on the same equipotential surface. In addition, the resistivity of the Hall device is not uniform or the excitation terminal is in poor contact, resulting in unequal potential at the output terminal. electric potential

As a result, the detection is inaccurate and the magnetic field is unstable.

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