Method for forming metal gates
A technology of metal gate and replacement gate, applied in semiconductor devices and other directions, can solve the problem of low reliability of semiconductor devices, and achieve the effects of improving reliability, avoiding power consumption and improving quality.
Active Publication Date: 2013-12-04
SEMICON MFG INT (SHANGHAI) CORP +1
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Problems solved by technology
[0005] The problem solved by the present invention is to provide a method for forming a metal gate to solve the problem of low reliability of semiconductor devices formed by using the prior art
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[0028] The reliability of semiconductor devices formed by the prior art is low. The inventor found that the low reliability of the semiconductor device was caused by the higher resistance value of the metal gate than the target resistance value. Further research found that it was because there were voids in the filling material of the metal gate, and the voids would increase the metal gate. The resistance value of the gate is higher than the target resistance value.
[0029] The inventors further found that the reasons for the formation of the voids are as follows: in the prior art, the sidewall of the replacement gate structure is perpendicular to the substrate, so the sidewall of the trench formed by removing the replacement gate structure is also perpendicular to the substrate, and the The corners at the trench opening are approximately right angles, so when filling the trench, the deposition rate near the opening is higher, and the deposition rate is lower toward the botto...
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Abstract
The invention provides a method for forming metal gates. The method comprises the following steps of: providing a substrate on which a first replacement gate electrode layer is formed, wherein the first replacement gate electrode layer comprises a first sacrificial layer and a second sacrificial layer which is positioned on the first sacrificial layer, and the thermal expansion coefficient of second sacrificial layer is higher than that of the first sacrificial layer; performing high temperature treatment on the first replacement gate electrode layer to form a second replacement gate electrode layer, wherein the width of the first sacrificial layer is smaller than that of the second sacrificial layer; forming a dielectric layer on the substrate, wherein the surface of the dielectric layer is flush with the surface of the second replacement gate electrode layer; removing the second replacement gate electrode layer to form a groove; and filling the groove with filling materials to form the metal gates. Through the high temperature treatment, the thickness of the first sacrificial layer is smaller than that of the second sacrificial layer, the groove of which the bottom width is smaller than the opening width is formed, gaps of the metal gates are prevented, the problem that the resistance values of the metal gates are higher than target resistance values to be formed is solved, and the reliability of a semiconductor device with the metal gates is improved.
Description
technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for forming a metal gate. Background technique [0002] With the reduction of technology nodes, the traditional gate dielectric layer is continuously thinner, and the leakage of transistors increases accordingly, causing problems such as waste of power consumption of semiconductor devices. In order to solve the above problems, the prior art provides a solution of replacing the polysilicon gate with a metal gate. Among them, the "gate last" process is a main process for forming the metal gate. [0003] The Chinese patent application with the patent publication number CN101438389A provides a method for forming a metal gate using a "gate last" process, including: providing a substrate on which a replacement gate structure is formed, and covering the replacing the interlayer dielectric layer of the gate structure; using the replacement gate structure as a stop la...
Claims
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IPC IPC(8): H01L21/28
Inventor 李凤莲
Owner SEMICON MFG INT (SHANGHAI) CORP