Film-forming apparatus

Abstract

A film formation apparatus includes: a chamber having a side wall and an inner space in which both a body to be processed and a target are disposed a first magnetic field generation section generating a magnetic field in the inner space a second magnetic field generation section disposed at a position close to the target, the second magnetic field generation section generating a magnetic field so as to allow perpendicular magnetic lines of force thereof to pass through a position adjacent to the target; and a third magnetic field generation section disposed at a position close to the body to be processed, the third magnetic field generation section generating a magnetic field so as to induce the magnetic lines of force to the side wall of the chamber.

Description

technical field [0001] The present invention relates to a film forming apparatus for forming a film on the surface of an object to be processed, and particularly to a DC magnetron film forming apparatus using a sputtering method which is one of thin film forming methods. [0002] this application claims priority based on Japanese Patent Application No. 2009-169449 for which it applied on July 17, 2009, and uses the content here. Background technique [0003] Conventionally, for example, a film-forming apparatus (hereinafter referred to as a “sputtering apparatus”) using a sputtering method has been used in a film-forming process in the production process of a semiconductor device. [0004] In sputtering devices for such applications, along with the miniaturization of wiring patterns in recent years, it is strongly required to be able to cover holes or grooves with high aspect ratios and fine patterns on the entire surface of the substrate to be processed with good coverage. ...

AI Technical Summary

Problems solved by technology

[0011] However, in the above-mentioned sputtering apparatus, there is a problem that electrons, argon ions, or metal ions (Cu, Al, Ti, Ta, etc.) that have escaped from the magnetic field formed on the target surface by the magnetic field generator reach the substrate, resulting in substrate damage

In addition, there is a problem that the temperature of the surface of the substrate rises due to electrons colliding with the substrate, resulting in a decrease in the quality of the substrate.

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