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Substrate processing apparatus, substrate processing method, and storage medium

A substrate processing device, substrate processing method technology, applied in the direction of chemical instruments and methods, cleaning methods and utensils, cleaning methods using liquids, etc., capable of solving problems such as damage to equipment

Inactive Publication Date: 2012-05-30
TOKYO ELECTRON LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, when such a high-pressure fluid flows out to the upstream and downstream sides of the processing container through the piping connected to the processing container, the pressure and temperature in the upstream and downstream areas may suddenly rise and damage the equipment.

Method used

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  • Substrate processing apparatus, substrate processing method, and storage medium
  • Substrate processing apparatus, substrate processing method, and storage medium
  • Substrate processing apparatus, substrate processing method, and storage medium

Examples

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Embodiment Construction

[0042] A cleaning processing system 1 as an example of a substrate processing system including the substrate processing apparatus of the present invention will be described. The cleaning processing system 1 includes a cleaning device 2 for supplying a cleaning liquid to a wafer as a substrate to be processed. W cleaning process is performed; the supercritical processing device 3 uses a supercritical fluid (fluid in a supercritical state) of IPA as a high-pressure state fluid (high-pressure fluid) to dry the wafer W after the above-mentioned cleaning process.

[0043] figure 1It is a cross-sectional plan view showing the overall structure of the cleaning processing system 1. When facing the figure and setting the left side as the front, in the cleaning processing system 1, it is accommodated in a FOUP (front opening type) placed on the loading unit 11. For example, a plurality of wafers W with a diameter of 300mm in the FOUP) 100 are transferred between the FOUP 100 and the rea...

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PUM

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Abstract

Disclosed is a substrate processing apparatus including a processing vessel in which a target substrate W is processed by using a high-pressure fluid in a supercritical state or a subcritical state, and pipes that are divided into a first pipe member and a second pipe member in a flowing direction of the fluid and circulate the fluid are connected to processing vessel. A connecting / disconnecting mechanism moves at least one of first and second pipe members between a connection position and a separation position of first pipe member and the second pipe member, and opening / closing valves are installed in each of first and second pipe members and are closed at the time of separating pipe members.

Description

technical field [0001] The present invention relates to the technology of treating substrates to be processed by using high-pressure fluid as supercritical fluid and subcritical fluid. Background technique [0002] In the manufacturing process of a semiconductor device where a stacked structure of an integrated circuit is formed on the surface of a substrate to be processed, for example, a semiconductor wafer (hereinafter referred to as a wafer), there is a need to clean the tiny parts of the wafer surface with a cleaning solution such as a chemical solution. The process of using liquid to treat the surface of the wafer, such as dust, natural oxide film removal, etc. [0003] For example, a single-sheet spin cleaning device that cleans a wafer rotates the wafer while supplying an alkaline or acidic chemical solution to the surface of the wafer using a nozzle, thereby removing dust, natural oxides, etc. on the surface of the wafer. remove. In this case, the residual chemica...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/00H01L21/02
CPCH01L21/6719H01L21/67051H01L21/02101H01L21/67017B08B3/04
Inventor 户岛孝之岩下光秋上川裕二中岛干雄
Owner TOKYO ELECTRON LTD