A method for removing contamination particles on an electrostatic chuck in a process chamber

Abstract

The invention provides a method for removing contamination particles on an electrostatic chuck in a process chamber. The method comprises the following steps of: providing a contamination particle adsorption wafer, wherein the contamination particle adsorption wafer comprises a substrate and an insulating medium layer growing on the substrate and the surface of the insulating medium layer is charged; placing the contamination particle adsorption wafer on the electrostatic chuck in the process chamber, wherein the insulating medium layer of the contamination particle adsorption wafer faces to the electrostatic chuck; adsorbing the contamination particles on the electrostatic chuck onto the insulating medium layer with the help of the charges carried by the insulating medium layer; and taking down the contamination particle adsorption wafer from the electrostatic chuck, and taking the contamination particle adsorption wafer out of the process chamber. By adopting the method provided by the invention, the contamination particles on the electrostatic chuck can be completely adsorbed once, the condition that when the process chamber implements the process, as the contamination particles exist on the electrostatic chuck, the machine is forced to stop for maintenance can be avoided, and the material cost and the time cost can be effectively saved.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for removing contamination particles on an electrostatic chuck in a process chamber. Background technique [0002] Semiconductor integrated circuit technology (including various processes, such as etching, deposition, implantation, and photolithographic shaping, etc.) is applied on a wafer to form a designed circuit and the connection relationship therebetween. The wafer is processed in the process chamber, and the wafer is fixed (Secure) on the wafer stage (WaferStage) in the process chamber (ProcessingChamber), and the wafer stage has an electrostatic chuck (Electrostatic Chuck, E-chuck), the wafer is placed on the electrostatic chuck and the wafer is adsorbed and fixed on the electrostatic chuck by static electricity. In order to ensure that the wafer can be smoothly adsorbed on the electrostatic chuck, it is necessary to avoid the adsorption of p...

AI Technical Summary

Problems solved by technology

[0003] The technical problem to be solved by the present invention is to provide a method for removing the contamination particles on the electrostatic chuck in the process chamber, so as to solve the problem in the prior art that the wafer cannot be smoothly adsorbed on the electrostatic chuck due to the contamination particles on the electrostatic chuck in the process chamber