Light-emitting diode (LED)
A technology of light-emitting diodes and light-emitting structures, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of low yield, rising cost, difficult technical means, etc., and achieve the effect of reducing light absorption
Active Publication Date: 2012-06-06
GENESIS PHOTONICS
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Problems solved by technology
[0006] Both of the above two methods can effectively improve the light extraction efficiency of the light-emitting diode. However, the technical means of forming a plurality of light correction rods 151 in the quantum unit 14 is difficult and the yield is low, resulting in the problem of rising costs. Although the technical means of one layer of roughening layer 17 can improve the luminous efficiency, there are still problems in the roughening process that are difficult to overcome. Therefore, it is still an urgent task in the industry to find a light-emitting diode that can have high light extraction efficiency and can be effectively mass-produced. look forward to
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[0034] The present invention will be described in detail below in conjunction with the accompanying drawings and embodiments.
[0035] refer to Figure 4 , Figure 5 , the first preferred embodiment of the light emitting diode of the present invention includes a patterned substrate 2 , a layer of light emitting structure 3 , a layer of transparent conductive layer 4 , and a set of electrode units 5 .
[0036] The patterned substrate 2 is patterned by chemical or physical methods. The patterned substrate 2 can be obtained by chemical methods such as chemical solutions or active gas dissolution reactions, and physical methods such as drilling and cutting with tools, molding with molds, or bombardment with high-energy active ions. The patterned substrate 2 has a top surface 21 of a specific shape including uniformly distributed protrusions 22, specifically, the protrusions 22 of the patterned substrate 2 have a regular arrangement period, and the arrangement period is 1.5 micro...
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The utility model relates to an LED comprising a patterned substrate provided with a plurality of protrusions, a layer of N-type gallium nitride series III-V group compound semi-conductors disposed on the patterned substrate, an active coating, illuminating structures of P-type gallium nitride series III-V group compound semi-conductors, a transparent conductive layer disposed on the illuminating structures, and a group of electrode units provided with an external electric energy to the illuminating structures. The transparent conductive layer comprises a plurality of configured surfaces of grooves, the projective range of the protrusions with respect to the transparent conductive layer is overlapped with the grooves, thereby the light emitted by the illuminating structures can be partially concentrated on the top surface by the patterned substrate and the transparent conductive layer, and then can be emitted to the outside. With the help of the configured surfaces of the transparent conductive layer, the rate of light absorption can be reduced, and the illuminating strength of the LED can be improved.
Description
technical field [0001] The invention relates to a light emitting diode, in particular to a light emitting diode having a transparent conductive layer with a structured surface. Background technique [0002] refer to figure 1 , 2 , the light-emitting diode (light-emitting diode, LED) light-emitting principle is to use the energy difference of electrons moving between n-type semiconductors and p-type semiconductors, and release energy in the form of light. This light-emitting principle is different from that of incandescent lamps. The principle of luminescence that produces light, so light-emitting diodes are called cold light sources. In addition, light-emitting diodes have the advantages of high durability, long life, light weight, low power consumption, and mercury-free environmental protection. Therefore, today's lighting market places high hopes on light-emitting diodes and regards them as a new generation of lighting tools. [0003] For light-emitting diodes, the rela...
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IPC IPC(8): H01L33/20H01L33/14
Inventor 吴志凌
Owner GENESIS PHOTONICS