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Driving circuit

A driving part and resistor technology, applied in electrical components, electronic switches, pulse technology, etc., can solve problems such as rise in die temperature, limitation of IGBT switching frequency and output capability, and threat to IGBT safe operation, so as to reduce switching loss, The effect of avoiding misoperation

Inactive Publication Date: 2013-08-21
深圳翼通明新能源科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When the operating frequency of the device is high, the switching loss will even greatly exceed the IGBT on-state loss, resulting in a high die temperature rise
This situation will greatly limit the switching frequency and output capability of the IGBT, and at the same time pose a great threat to the safe operation of the IGBT

Method used

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  • Driving circuit

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Embodiment Construction

[0013] The present invention will be further described below in conjunction with the accompanying drawings of the description.

[0014] like figure 1 As shown, a driving circuit is composed of a driving part, a level conversion part and an output switch part, and the output end of the output switch part is connected with a MOS transistor or an IGBT.

[0015] The output switch part mainly includes a transistor Q2 and a transistor Q4, the emitter of the transistor Q2 is sequentially connected to the output terminal C of the output switch part after being connected in series with the resistors R5 and R6, and the emitter of the transistor Q4 is sequentially connected with the resistors R7, R6 is connected in series with the output terminal C of the output switch part; the bases of the transistors Q2 and Q4 are both connected to the output terminals of the level conversion part; the output terminal of the driving part is connected to the transistor Q2 through a diode D1 The collec...

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Abstract

A driving circuit is formed by a driving portion, a level conversion portion and an output switch portion. The output switch portion mainly comprises triodes Q2 and Q4, an emitting electrode of the triode Q2 is in series connection with resistors R5 and R6 sequentially to be connected with the output end of the output switch portion, an emitting end of the triode Q4 is in series connection with resistors R7 and R6 sequentially to be connected with the output end of the output switch portion, and base electrodes of the triodes Q2 and Q4 are both connected with the output end of the level conversion portion. The output end of the driving portion is connected with a collector electrode of the triode Q2 through a diode D1, a collector electrode of the triode Q4 passes through a diode D2 and aresistor R8 sequentially to be connected with the output end of the output switch portion, and a negative electrode of the diode D2 is respectively connected with the resistor R8 and a negative powersupply -V. When the driving circuit for a metal oxide semiconductor (MOS) tube or an insulated gate bipolar transistor (IGBT) drives the MOS tube and the IGBT, the rising-falling edge of a switch is shortened, and switch loss can be reduced.

Description

technical field [0001] The invention relates to a driving circuit, especially for driving a MOS tube or an IGBT. Background technique [0002] In recent years, the new power switching device IGBT has been gradually recognized by people. Compared with the previous power electronic devices, IGBT currently has obvious advantages in comprehensive performance, and is being more and more applied to the operating frequency of In various power changing devices with tens of kilohertz and output power of several kilowatts to tens of kilowatts. [0003] The dynamic driving ability is strong, and it can provide the driving pulse with a steep front and back for the gate of the IGBT. When the IGBT works in the hard switching mode, a large loss will be generated during the turn-on and turn-off process. The longer the process, the greater the switching loss. When the operating frequency of the device is high, the switching loss will even greatly exceed the IGBT on-state loss, resulting in...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03K17/567
Inventor 陈清娇
Owner 深圳翼通明新能源科技有限公司