Control method of semiconductor microwave oven
A control method and semiconductor technology, applied in microwave heating, sustainable buildings, climate sustainability, etc., can solve the problems of difficult manufacturing, short working life, and high voltage, and achieve improved heating efficiency, wide application range, and heating efficiency. high effect
Active Publication Date: 2016-05-04
GUANGDONG MIDEA KITCHEN APPLIANCES MFG CO LTD +1
View PDF4 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
[0003] Ordinary magnetron microwave ovens have high cost, large volume, high weight, and high voltage, while magnetrons have low power output efficiency, short working life, high material standard requirements, and difficult manufacturing, which limit the further improvement of microwave ovens.
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0030] The present invention will be further described below in conjunction with the accompanying drawings and embodiments.
[0031] see figure 1 , The semiconductor microwave oven includes a power supply 1, a semiconductor power source 2, an oven chamber 3 and a control system 4, the control system 4 is connected to the power supply 1 and the semiconductor power source 2 respectively, and the semiconductor power source 2 outputs microwaves to the oven chamber 3.
[0032] see figure 2 , The semiconductor power source includes a bias voltage and control circuit 21 , a power detection and control circuit 22 , a power combiner 23 , LDMOS transistors 24 , LDMOS transistors 25 , . . . LDMOS transistors 2N and an output 20 . Among them, the bias voltage and control circuit 21 is connected with the LDMOS tube 24, and the LDMOS tube 24, LDMOS tube 25, ... LDMOS tube 2N are connected in parallel and respectively connected with the power combiner 23, and the power combiner 23 is conne...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
A control method of a semiconductor microwave oven is characterized by comprising the following steps: 1, firstly setting a power value P0 of the semiconductor microwave oven by a power setting press key on the semiconductor microwave oven; 2, calculating a direct current voltage V0 required by a corresponding semiconductor power source by a control center of the semiconductor microwave oven according to the power value P0; 3, transferring an output signal to a direct current power source by the control center of the semiconductor microwave oven and adjusting the output voltage of the direct current power source to V0. The control method also comprises a calculation method of a minimum standing-wave ratio of the semiconductor microwave oven and the calculation method comprises the following steps: 1, setting the current output power of the semiconductor power source as 1 / 10 of the total power; setting the frequency f of the semiconductor power source as 2400MHz and starting the semiconductor power source. The control method of the semiconductor microwave oven has features of flexible operation, high heating efficiency and wide application range.
Description
technical field [0001] The invention relates to a semiconductor microwave oven, in particular to a control method for the semiconductor microwave oven. Background technique [0002] At present, the main components of a common magnetron microwave oven include a magnetron, a high-voltage transformer, a high-voltage capacitor, a high-voltage diode, a cavity, a furnace door, and control components. On the one hand, the AC power supply provides the filament voltage for the magnetron through a high-voltage transformer; on the other hand, after being boosted by a high-voltage transformer, capacitor, and diode, it becomes a DC pulsating high voltage, so that the magnetron can emit microwaves. After the microwave enters the cavity of the microwave oven through the rectangular waveguide, it interacts with the heated material in the cavity to realize rapid microwave heating. [0003] Ordinary magnetron microwave ovens have high cost, large volume, high weight, and high voltage, while ...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Patents(China)
IPC IPC(8): H05B6/66
CPCY02B40/00
Inventor 唐相伟欧军辉梁春华陈星超
Owner GUANGDONG MIDEA KITCHEN APPLIANCES MFG CO LTD