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Preparation method of polysilicon rod

A technology of polycrystalline silicon rods and silicon cores, applied in the direction of silicon, etc., can solve the problems of polycrystalline silicon rod diameter increase, polycrystalline silicon rod dumping, etc.

Inactive Publication Date: 2012-06-27
GUODIAN NINGXIA SOLAR
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  • Abstract
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Problems solved by technology

When the temperature rises above the melting point of silicon, 1410°C, the inside of the polysilicon rod, especially the silicon core, melts, causing the polysilicon rod to fall, which limits the further increase in the diameter of the polysilicon rod

Method used

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  • Preparation method of polysilicon rod
  • Preparation method of polysilicon rod
  • Preparation method of polysilicon rod

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Embodiment Construction

[0023] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0024] refer to figure 1 , figure 1 It is a schematic flow diagram of a method for preparing a polycrystalline silicon rod provided by the present invention, the method specifically includes the following steps:

[0025] Step S1: applying high voltage to the silicon core in the bell-type reduction furnace to break down the silicon core.

[0026] refer to figure 2 , figure 2 A schematic structural view of a preparation device for polycrystalline silicon r...

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Abstract

The embodiment of the invention discloses a preparation method of a polysilicon rod, comprising the following steps of: applying high voltage on silica core inside a bell jar type reducing furnace for the breakdown of the silica core; reducing the voltage of the power supply connected with the silica core to maintain the temperature of the silica core between 1130 DEG C and 1150 DEG C; allowing trichlorosilane and hydrogen at preset mol ratio to enter into the bell jar type reducing furnace and letting trichlorosilane and hydrogen react on the surface of the silica core to generate silicon, wherein the silica core and the silicon generated on the surface of the silica core are collectively called the polysilicon rod; and adjusting frequency of the power supply connected with the silica core according to the diameter of the polysilicon rod so as to generate skin effect on the surface of the polysilicon rod and maintain the temperature of the polysilicon rod between 1130 DEG C and 1150 DEG C. The method provided by the invention can be adopted to prepare the polysilicon rod with its diameter being greater than 300mm.

Description

technical field [0001] The invention relates to the technical field of semiconductor silicon material manufacturing technology, and more specifically, relates to a method for preparing polycrystalline silicon rods. Background technique [0002] Polycrystalline silicon rods are raw materials for the preparation of semiconductor devices and solar cells, and are the cornerstone of the global electronics industry and photovoltaic industry. At present, the main method for preparing polysilicon rods is the improved Siemens method, which is a chemical vapor deposition technology that uses a bell jar reactor. The basic principle is to use silicon cores (or silicon core rods) as heating elements and silicon deposition. The carrier uses trichlorosilane as the reaction gas and hydrogen as the reducing gas. After the silicon core rises to a certain temperature, trichlorosilane and hydrogen react on the surface of the silicon core to form silicon and deposit on the surface of the silicon...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B33/03
Inventor 侯俊峰武在军李峰杨光军毕明锋张滨泉
Owner GUODIAN NINGXIA SOLAR
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