Manufacturing method of electroluminescence test electrode
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- ADVANCED OPTRONIC DEVICES CHINA
- Publication Date
- 2012-06-27
- Estimated Expiration
- Not applicable · inactive patent
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Abstract
Description
technical field
[0001] The invention relates to a method for manufacturing an electrode, in particular to a method for manufacturing an electroluminescence test electrode, which belongs to the field of LED test electrodes. Background technique
[0002] After the epitaxial wafer is grown, it is necessary to quickly and accurately measure its photoelectric parameters with an electroluminescence tester, and then adjust various parameters of the epitaxial growth program according to the measurement results, so as to achieve the purpose of continuously optimizing the epitaxial structure.
[0003] The current electrode production scheme includes the following steps: â‘ select indium grains of uniform size; â‘¡press the indium grains on the epitaxial wafer; â‘¢heat to reduce the contact resistance between the indium grains and the epitaxial wafer; â‘£test with an electroluminescence tester.
[0004] Disadvantages of the existing technology: Before each measurement using the electroluminesc...