38 results about "Phototesting" patented technology

The invention belongs to the technical field of photoelectric testing and relates to a method for controlling the integration time of a CCD photodetector. A CCD photodetector integration time control method of adaptive light intensity, comprising (1): initial integration time is set as t i , where t min <t i <t max ;(2): collect spectral signal [s 1 ,s 2 ..., s m ], calculate the spectral signal mean s avg ;(3): Acquisition and calculation of spectral noise σ dark ;(4): judge s avg and δ·σ dark , δ is the influence factor of dark noise: if s avg <δ·σ dark , set the integration time to t j , t min <t j <t max , and t j ≠t i , and go to step (1); if s avg ≥δ·σ dark , denoise the spectral signal first, and then set the integration time. The method of the present invention adjusts the integration time adaptively according to the light intensity, and simultaneously considers the influence of dark noise on the output signal to adjust the integration time adaptively. Scenes.

The invention discloses a tera-hertz photoelectric characteristic test system capable of realizing multiple test functions on photoelectric characteristics and the like of Fourier spectra, transmittance spectra, reflection spectra and tera-hertz electronic devices by combination of various customized light sources and detectors, light path components selected by a user, and addition of peripheralauxiliary equipment. The tera-hertz photoelectric characteristic test system has the advantages of high signal-to-noise ratio, high resolution, strong expandability, low cost and the like, and can bewidely suitable for tera-hertz technical research, new material research, environmental detection and biomedical analysis. In the tera-hertz photoelectric characteristic test system, the light paths,circuits and control of the spectra and photoelectric response test system are subjected to design optimization and systematic integration; compact and reasonable optical, mechanical and vacuum cavity structures are designed; computer controlled accurate mechanical scanning and data acquisition are adopted; and finally the aim of testing and analyzing tera-hertz photoelectric characteristics of materials and core devices such as tera-hertz light sources and detectors by using combination of various light sources and detectors can be fulfilled.

A high-speed response photoelectric test device includes a transmitter (1) and a receiver (2), and three pairs of transmitting tubes and receiving tubes that can form three optical paths are embedded at the symmetrical ends of the transmitter (1) and the receiver (2). tube, the three pairs of optical paths are perpendicular to the symmetrical ends and have equal distances. The high-speed response photoelectric test device includes a transmitting circuit and a receiving circuit, which can convert optical signals into electrical signals and output TTL levels. The response time of the invention is less than 5us, and the separation speed test of the aerospace pyrotechnic separation device mainly based on explosive bolts can be realized, the operation is convenient, and the reliability and accuracy requirements of the test can be guaranteed.

The invention relates to a preparation method of a photoelectrochemical immunosensor for detecting cardiac troponin I. The present invention separates the immune analysis from the photoelectric test by constructing a combined photoelectrochemical sensor, so as to realize the goal that the photoelectric test and the immune recognition process of biomolecules do not interfere with each other. Tungsten trioxide decorated with bismuth sulfide nanorods is used as the base material to provide the basic photoelectric response, and the band gap structure of the two is matched, which can make good use of visible light. Secondly, carry out the characteristic immune recognition of antigen and antibody in 96 microwell plates, and use cadmium sulfide to encapsulate the second antibody of cardiac troponin I labeled with mesoporous silica coated with ascorbic acid. Silicon oxide is firmly combined. When dithiothreitol is dropped into it, the disulfide bond between cadmium sulfide and silicon dioxide is broken, and ascorbic acid is released, thereby increasing the photocurrent to varying degrees and realizing the effect on myocardial muscle. Sensitive detection of calprotein I. Its detection limit was 0.17 pg / mL.

The invention provides an accelerated test device and method for a quantum dot photodetector under vacuum and low temperature, which has simple test steps, high efficiency and low test error. The test device of the invention can simulate the vacuum and low temperature environment in space, use ultraviolet light to irradiate the photoelectric device to accelerate the aging, and automatically conduct regular tests and record data, so as to obtain the performance degradation test data of the quantum dot photodetector in the simulated vacuum and low temperature environment. In the test device of the invention, a sustainable UV lamp is placed in the quantum dot photodetector container, which can realize the function of ultraviolet accelerated aging; a vacuum gauge and a temperature sensor are placed outside the quantum dot photodetector container, which can monitor the temperature and temperature of the simulated environment in real time. The vacuum degree changes to monitor the test situation; the integrated automatic photoelectric test module can realize the automatic test of the photoelectric performance of the photodetector, and has a complete system and function. The test method based on the device of the present invention is reasonable and achievable.

The invention discloses a Ga 2 o 3 The preparation method of the deep ultraviolet detector mainly solves the problems of high reaction temperature and complex equipment process in the prior art. The implementation plan is: 1. Prepare the precursor gallium acetylacetonate aqueous solution; 2. Clean the sapphire substrate; 3. Ultrasonic atomize the precursor gallium acetylacetonate aqueous solution through Mist-Cvd equipment, and put it on the cleaned sapphire substrate Heating grows to Ga 2 o 3 thin film; 4. Ga 2 o 3 Make electrode pattern on the sample of thin film; 5. On the Ga with electrode pattern 2 o 3 Fabricate metal electrodes on the film to complete the Ga 2 o 3 Fabrication of deep ultraviolet detectors. The process of the invention is simple and easy to realize, that is, a high-quality thin film can be obtained in a short time only at a relatively low synthesis temperature. Photoelectric tests show that the deep ultraviolet photodetector made by the invention has high responsivity and fast response time, and can be used in the preparation of detectors.

The invention relates to the field of LED tests of LED photoelectric comprehensive testers, in particular to a calibration method of an LED photoelectric comprehensive tester. The LED photoelectric comprehensive tester comprises an integrating sphere, a photoelectric detector, an A / D circuit and a test control system. The calibration method comprises following steps of measuring wavelength errors, wavelength repeatability, color and temperature errors, luminous flux errors, light intensity errors, forward voltage errors, forward current errors, backward voltage errors and backward leakage current errors of the to-be-calibrated LED photoelectric comprehensive tester; and carrying out wavelength calibration, color and temperature calibration, luminous flux calibration, light intensity calibration, forward electrical performance calibration and backward electrical performance calibration on the to-be-calibrated LED photoelectric comprehensive tester. According to the invention, various photoelectric test parameters can be calibrated simultaneously without professional calibration tools; calibration processes are simple; calibration cost is reduced; calibration time is reduced and energy is saved; and accuracy and efficiency of the calibration are improved.

The embodiment of the invention provides an optical alignment method for machining of plate-like products. The method comprises following steps: arranging photoelectric sensors on an X axis and a Y axis of an L-shaped photoelectric testing platform; moving an object-carrying platform along an X axis of the L-shaped photoelectric testing platform and stopping till the state of any photoelectric sensor changes in an Y axis; moving the object-carrying platform along an Y axis; calculating the movement distance of the object-carrying platform along the Y axis; calculating deviation angles of an X direction of an edge of a to-be-machined substrate and an X axis; rotating the object-carrying platform at a deviation angle such that the edge of the X axis of the to-be-machined substrate runs parallel to the X axis; and ordering the object-carrying platform along the X axis and the Y axis and moving the to-be-machined substrate to the specific position and finishing alignment. The method is utilized so that alignment of the to-be-machined substrate is achieved. Compared with the conventional method of utilizing coordinate calcuactions, accuracy and easiness are obtained.

The invention discloses a photo-induced electrochemical immunosensor for detecting cancer cells based on the self-assembled organic semiconductor material PC05 nanowire structure. The length of a nanowire is regulated by using a simple self-assembling method and the nanowire with the most suitable length is selected. The organic semiconductor nanowire has the perfect crystal structure to realize the charge transport well. Meanwhile, gold nanoparticles are deposited on the electrode by electrodeposition and the Fermi level of gold matches the PC05 nanowire well, so that the photoelectric signalof the sensor is enhanced. Moreover, because of the PC05 as a p type semiconductor, the dissolved oxygen in the detection solution can consume the excited electrons in photoelectric testing.

The invention discloses a manufacturing method of an electroluminescence test electrode. The method comprises the following steps: selecting indium granular with a same size; using a fixed pressure to carry out constant force pressing indium granular on an epitaxial wafer; repeatedly carrying out heating, cooling, the constant force pressing to the indium granular so that a resistance between the indium granular and the epitaxial wafer can reach stability. The invention has the following advantages that: the manufacturing method is simple; usage is convenient; through repeatedly carrying out the heating, the cooling, the constant force pressing to the indium granular, repeatability of the test can be substantially increased and a repeatability standard deviation can be controlled in 0-4% so that a reliable and stable photoelectric test result can be obtained.