Method for measuring neutron dose equivalent by utilizing semiconductor array

A neutron dose, semiconductor technology, applied in the direction of semiconductor detector measurement, etc., can solve the problems of large volume, poor energy response, heavy, and generally require multiple measurements to give results, etc., to achieve small size and light weight Effect

Inactive Publication Date: 2012-07-04
CHINA INST FOR RADIATION PROTECTION
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Problems solved by technology

The survey instrument is small in size, light in weight, simple in structure, and convenient to measure, but due to its poor energy response, the uncertainty of the measurement result is large, which may reach 500%. The spectrometer instrument has ...

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  • Method for measuring neutron dose equivalent by utilizing semiconductor array
  • Method for measuring neutron dose equivalent by utilizing semiconductor array
  • Method for measuring neutron dose equivalent by utilizing semiconductor array

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Embodiment Construction

[0024] The present invention will be described in detail below in conjunction with the accompanying drawings and embodiments.

[0025] The method for measuring neutron dose equivalent by semiconductor array provided by the present invention comprises:

[0026] Step (1), a plurality of boron-coated semiconductor detectors are arranged on the circuit board to form a one-dimensional array, and then the one-dimensional array is placed in the metal tube to form a semiconductor array tube;

[0027] Step (2), inserting three semiconductor array tubes into the moderator in a vertical manner in pairs;

[0028] Step (3), obtaining the energy before the neutron incident according to the transport theory of the particle, and obtaining the energy before the neutron incident; merging the energy before the neutron incident obtained by each detector to obtain the energy spectrum of the neutron;

[0029] In step (4), the counts measured by each semiconductor detector are converted to obtain t...

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Abstract

The invention relates to a method for measuring neutron dose equivalent, and in particular relates to a method for measuring neutron dose equivalent by utilizing a semiconductor array. The method comprises the following steps of: three semiconductor array pipes are inserted a polyethylene degradation body according to a three-dimensional coordinate axis manner, wherein the sum of counting of semiconductor detectors is fluence of an incident neutron; the slowing-down distance of each semiconductor detector is different, therefore an energy spectrum of the incident neutron is obtained in a reverse thrust manner; and the dose equivalent of the neutron can be obtain through calculating by combining the fluence and the energy spectrum. According to the invention, the uncertainty of a measurement result is much less than that of a tour gauging type instrument, meanwhile, the structure of the three semiconductor array pipes are adopted, therefore the tour gauging type instrument maintains the advantages of light weight and small volume.

Description

technical field [0001] The invention relates to a method for measuring neutron dose equivalent, in particular to a method for measuring neutron dose equivalent by using a semiconductor array. Background technique [0002] The contribution of the same fluence of neutrons to the dose is much greater than that of the same fluence of gamma radiation (5 to 20 times larger depending on the energy), so the monitoring of neutron dose is one of the key points of radiation protection. [0003] There are mainly two types of neutron dose measuring instruments: survey type and spectrometer type. The survey instrument is small in size, light in weight, simple in structure, and convenient to measure, but due to its poor energy response, the uncertainty of the measurement result is large, which may reach 500%. The spectrometer instrument has a complex structure, large volume, and heavy weight. It takes multiple measurements to give the result, and the spectrometer type instrument can obtai...

Claims

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Application Information

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IPC IPC(8): G01T3/08
Inventor 刘建忠王勇靳根杨亚鹏姚小丽王晓东陈法国刘惠英周彦坤刘倍徐园
Owner CHINA INST FOR RADIATION PROTECTION
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