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Capacitance humidity sensor with temperature drift compensation and making method thereof

A humidity sensor and temperature drift compensation technology, applied in the direction of material capacitance, etc., can solve the problems of complex circuits and large chip area, and achieve the effect of simple process, simple structure and overcoming temperature drift problems

Inactive Publication Date: 2012-07-11
SOUTHEAST UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the disadvantages of this structure are: first, it takes up a large chip area, and second, it requires complex circuits to realize capacitance differential compensation.

Method used

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  • Capacitance humidity sensor with temperature drift compensation and making method thereof
  • Capacitance humidity sensor with temperature drift compensation and making method thereof

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Embodiment Construction

[0022] In order to make the content of the present invention more comprehensible, further description will be made below in conjunction with the accompanying drawings and specific embodiments.

[0023] Such as figure 1 As shown, the capacitive humidity sensor with temperature drift compensation of the present invention includes a semiconductor substrate layer 1, an insulating layer 2, a humidity sensing cantilever and a sensing electrode; wherein:

[0024] The insulating layer 2 covers the upper surface of the semiconductor substrate layer 1;

[0025] One end of the humidity-sensing cantilever is fixed on the insulating layer 2, and the other end is located above the insulating layer 2 and suspended in the air; the humidity-sensing cantilever is composed of a first moisture-sensitive material layer 41, a moisture-proof layer 42 and a second moisture-sensing material layer stacked from bottom to top. Moisture-sensitive material layer 43 is formed, wherein the thickness of the ...

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Abstract

The invention discloses a capacitance humidity sensor with temperature drift compensation and a making method thereof. The sensor main body adopts the surface micro-mechanical machining technology to form an isolation layer on a semiconductor substrate and a humidity sensing cantilever and upper and lower electrodes on the isolation layer, wherein a first humidity sensitive material layer, a humidity isolation layer and a second humidity sensitive material layer are piled up on the humidity sensing cantilever from bottom to top; and the upper electrode is covered on the lower surface of the first humidity sensitive material layer and forms sensitive capacitance with the lower electrode. When the ambient humidity changes, the size changes of the first humidity sensitive material layer and the second humidity sensitive material layer are different, so as to enable the humidity sensing cantilever to be deformed and then the upper electrode to be deformed, as a result, the capacitance between the upper and the lower electrodes is changed, and the change of the capacitance value can represent the change of the ambient temperature. When the ambient temperature changes, if the size changes of the two humidity sensitive material layers of the humidity sensing cantilever are the same, the effect of phase drift compensation is achieved, and the capacitance humidity sensor with the temperature drift compensation has the outstanding property of low temperature drift.

Description

technical field [0001] The invention relates to the technical field of humidity sensors realized by surface micromachining, in particular to a capacitive humidity sensor with temperature drift compensation and a manufacturing method thereof. Background technique [0002] Humidity sensors are widely used. Traditional humidity sensors are mainly humidity sensitive resistors. Although these sensors are low in cost, their accuracy is poor. Capacitive humidity sensor is another common structure of humidity sensor. This type of sensor has high sensitivity and is the main form of humidity sensor at present. Capacitive humidity sensing structures usually use polymer materials as the humidity-sensing medium. Due to the large thermal expansion coefficient of the humidity-sensing material, the humidity-sensing characteristics also change, so temperature compensation is required. For example, the humidity sensor of Sensirion in Switzerland adopts two consistent interdigitated structure...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/22
Inventor 秦明周永丽黄见秋
Owner SOUTHEAST UNIV
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