Writing balancing method of phase change memory

Abstract

The invention provides a writing balancing method of a phase change memory. The method comprises the following steps of: dividing a high-capacity phase change memory system into a plurality of memory regions, wherein each region comprises a plurality of memory arrays, each array comprises a plurality of memory rows, and each memory row is composed of a plurality of bytes and located in the same region; storing file data by a striping method to increase a mapping discretization degree of data address mapping; performing writing balancing via a neighbored copying algorithm in the array, namely maintaining a blank row pointer, and copying the data of an upper line neighboring to the pointer into the position directed by the pointer, thereby realizing the writing balance of the two memory rows; mapping the blank rows of all the arrays to a special array via an interlaced mapping mode so as to improve the discretization degree of the special array. The method can increase the discretization degree of the data address mapping, and can resist the malicious attack of repeatedly writing the same memory unit more effectively so as to realize the writing balance of the whole memory system, thereby prolonging the service life and increasing the utilization rate of the memory system.

Description

technical field [0001] The invention belongs to the technical field of computer storage devices, and in particular relates to a write equalization method of a phase change memory. Background technique [0002] Phase Change-Random Access Memory (PCRAM or PCM for short) is a new type of resistive non-volatile semiconductor memory. The crystalline state (the material is in a low-resistance state) and the amorphous state (the material is in a high-resistance state) show a significant difference in resistance value to realize data storage. PCRAM has many excellent characteristics such as one-bit variability, non-volatility, fast read and write speed, and high storage density. It is very suitable as a high-density stand-alone or embedded memory. However, the lifespan of the current phase-change memory system can only reach a few years or even less, which is far from meeting the needs of users, because the phase-change memory has a limit on the number of times it can be written (1...

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Problems solved by technology

However, this method also has some shortcomings, such as being unable to resist the attack of repeatedly writing the same storage unit; the degree of dispersion is not enough; it is more suitable for storage systems with sparse and scattered storage, not suitable for large-capacity intensive storage systems, etc.

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