Unlock instant, AI-driven research and patent intelligence for your innovation.

Silicon wafer adsorption mechanism and use method thereof

A technology of adsorption mechanism and silicon wafer, which is applied in the direction of electrical components, semiconductor/solid-state device manufacturing, circuits, etc. problem, to overcome the influence, improve the quality, improve the effect of local facial shape

Active Publication Date: 2012-07-11
SHANGHAI MICRO ELECTRONICS EQUIP (GRP) CO LTD
View PDF3 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] (1) Due to the processing technology, the surface of the silicon wafer is not an ideal plane;
[0005] (2) The unevenness of the surface of the wafer table will also make the surface shape of the silicon wafer after adsorption unsatisfactory;
[0007] The above factors will affect the quality of exposure imaging of lithography equipment

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Silicon wafer adsorption mechanism and use method thereof
  • Silicon wafer adsorption mechanism and use method thereof
  • Silicon wafer adsorption mechanism and use method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0038] Specific embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0039] In view of the defects in the prior art, the present invention provides a silicon wafer adsorption mechanism, the position of the vacuum outlet of the silicon wafer adsorption mechanism can be expressed by coordinates, so as to ensure that the number and relative position of the vacuum ports are consistent in different exposure fields. A specific implementation manner is provided below, and the vacuum outlets are arranged in a matrix as an example for specific description.

[0040] figure 2 It is a structural schematic diagram of the vacuum port distribution of the silicon wafer adsorption mechanism involved in the present invention. image 3 It is a schematic diagram of the vacuum outlet of a single exposure field. In the figure, 20 is a vacuum outlet, 20a indicates a vacuum outlet at the edge of the exposure field, and 20b indicate...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a silicon wafer adsorption mechanism, which comprises a plurality of vacuum outlets and is characterized in that each vacuum outlet is connected with two paths of passages which are respectively a vacuum positive pressure passage and a vacuum negative pressure passage, and a switch is placed in the passages and is used for controlling the negative pressure or the positive pressure of the vacuum outlet passages. The invention also discloses a method for using the silicon wafer adsorption mechanism.

Description

technical field [0001] The invention relates to the field of integrated circuit manufacturing, in particular to a silicon chip adsorption mechanism used in photolithography equipment and a method for using the same. Background technique [0002] Photolithography, or photolithography, has been widely used in integrated circuit manufacturing processes. This technology exposes through a photolithography system to transfer the designed mask pattern to the photoresist. Since the feature size of the integrated circuit is ultimately determined, the lithography system is an important device in the integrated circuit manufacturing process, and its precision requirements are self-evident for the lithography process. In order to obtain the best imaging effect, during exposure, the silicon wafer coated with photoresist is adsorbed on the film holder, and its upper surface needs to be placed at the optimum image plane height. [0003] The silicon wafer adsorption mechanism used in the ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/683H01L21/66G03F7/20
Inventor 唐彩红王帆
Owner SHANGHAI MICRO ELECTRONICS EQUIP (GRP) CO LTD