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Fabricating method for one-dimensional large-scale multistage-step structure

A manufacturing method and large-scale technology, applied in the direction of microstructure technology, microstructure devices, manufacturing microstructure devices, etc., can solve the problems of clean removal, unacceptable, and affecting the normal progress of the process, and achieve the effect of improving performance and simple process

Active Publication Date: 2015-05-06
ADVANCED SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

These residues or polymers cannot be removed by ordinary cleaning steps, which will affect the normal operation of subsequent processes and even lead to unacceptable consequences

Method used

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  • Fabricating method for one-dimensional large-scale multistage-step structure

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Embodiment Construction

[0027] The present invention will be described in further detail below in conjunction with accompanying drawing:

[0028] In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. However, the present invention can be implemented in many other ways different from those described here, and those skilled in the art can make similar extensions without violating the connotation of the present invention, so the present invention is not limited by the specific implementations disclosed below.

[0029] Secondly, the present invention is described in detail using schematic diagrams. When describing the embodiments of the present invention in detail, for the convenience of explanation, the cross-sectional views showing the device structure are not drawn according to the same scale, and the schematic diagrams are only examples, which should not limit the present invention. scope of protection. In additio...

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Abstract

The invention relates to a fabricating method for a one-dimensional large-scale multistage-step structure. The fabricating method comprises the steps that: a barrier layer is deposited on a substrate; first photoresist is coated, and a first window is formed by photoetching; the barrier layer in the first window is etched, and the first photoresist is removed; second photoresist is coated, a second window is formed by photoetching and is opposite to the first window, and the width of the second window is less than that of the first window; the substrate in the second widow is etched, a first step is formed on the substrate, and the second photoresist is removed; the substrate is etched by adopting the barrier layer as a mask, and a second step is formed on the substrate; and the barrier layer is removed. According to the invention, the one barrier layer and a plurality of photoresist processes are adopted, the multistage steps are formed on the substrate, and the height of the steps can reach a micrometer level and even a nanometer level, so that the performance of a one-dimensional large-scale component is improved. According to the invention, a sacrificial layer is adopted for removing residues and polymers in the etching process.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for manufacturing a one-dimensional large-scale multi-level step structure. Background technique [0002] Optics is one of the earliest and most active fields of MEMS technology application. Typical applications include digital light projection, full-color digital display, adjustable light source and sensor, fiber optic switch, free space communication, etc. [0003] The application of MEMS technology in the field of optics has its unique advantages. Since photons have little mass and exert little force on microstructures, devices formed by silicon microfabrication only interact with these photons, so they are very suitable for optical applications. Moreover, the packaging of the OPMEMS is relatively simple, as long as the components of the OPMEMS are sealed in a light-transmitting shell to ensure that they are not disturbed by environmental factors such as parti...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B81C1/00
Inventor 张挺陈健刘纵曙张艳红
Owner ADVANCED SEMICON MFG CO LTD