Method for preparing bismuth ferrite film with dielectric property by adopting liquid-phase self-assembly technology

A technology of self-assembly and dielectric properties, applied in chemical instruments and methods, iron compounds, inorganic chemistry, etc., to achieve the effects of low leakage current, low requirements for experimental conditions, and less space charge

Active Publication Date: 2014-04-16
SHAANXI UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

For the self-assembly technique to prepare BiFeO 3 thin film, which is in the exploratory stage, the prepared BiFeO 3 Thin films, which have not been observed to have dielectric properties

Method used

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  • Method for preparing bismuth ferrite film with dielectric property by adopting liquid-phase self-assembly technology
  • Method for preparing bismuth ferrite film with dielectric property by adopting liquid-phase self-assembly technology
  • Method for preparing bismuth ferrite film with dielectric property by adopting liquid-phase self-assembly technology

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Experimental program
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Effect test

Embodiment 1

[0016] Step 1: Configuration of precursor solution. Weigh Bi(NO 3 ) 3 ·5H 2 O, Fe(NO 3 ) 3 9H 2 O, measure glacial acetic acid, be dissolved in distilled water and be configured into a 200ml solution, stir at room temperature until completely clear, add citric acid, continue stirring at room temperature until the solution is clear, and obtain the precursor solution. In the precursor solution, the molar concentration of bismuth ions is 0.01 mol / L, the molar concentration of iron ions is 0.045mol / L, the volume fraction of glacial acetic acid is 2%, and the molar concentration of citric acid is 0.02mol / L.

[0017] Step 2: Functionalization of the substrate. The substrates were ultrasonically washed in deionized water, acetone, and absolute ethanol for 10 min. After irradiating with ultraviolet light for 20 min, soak in OTS (1vol%)-toluene solution for 30 min to prepare an OTS monolayer film, and dry at 120 °C for 5 min to remove organic matter. Finally, it was irradiated ...

Embodiment 2

[0022] Step 1: Configuration of precursor solution. Weigh Bi(NO 3 ) 3 ·5H 2 O, Fe(NO 3 ) 3 9H 2 O, measure glacial acetic acid, be dissolved in distilled water and be configured into a 200ml solution. Stir at room temperature until completely clear, add citric acid, continue stirring at room temperature until the solution is clear, and then obtain the precursor solution. In the precursor solution, the molar concentration of bismuth ions is 0.01mol / L, and the molar concentration of iron ions is 0.03mol / L. The volume fraction of citric acid is 2%, and the molar concentration of citric acid is 0.02mol / L.

[0023] Step 2: Functionalization of the substrate. The substrates were ultrasonically washed in deionized water, acetone, and absolute ethanol for 10 min. After irradiating with ultraviolet light for 20 min, soak in OTS (1vol%)-toluene solution for 30 min to prepare an OTS monolayer film, and dry at 120 °C for 5 min to remove organic matter. Finally, it was irradiated ...

Embodiment 3

[0028] Step 1: Configuration of precursor solution. Weigh Bi(NO 3 ) 3 ·5H 2 O, Fe(NO 3 ) 3 9H 2 O, measure glacial acetic acid, be dissolved in distilled water and be configured into a 200ml solution. Stir at room temperature until completely clear, add citric acid, continue stirring at room temperature until the solution is clear, and then obtain the precursor solution. In the precursor solution, the molar concentration of bismuth ions is 0.01mol / L, and the molar concentration of iron ions is 0.015mol / L. The volume fraction of citric acid is 2%, and the molar concentration of citric acid is 0.02mol / L.

[0029]Step 2: Functionalization of the substrate. The substrates were ultrasonically washed in deionized water, acetone, and absolute ethanol for 10 min. After irradiating with ultraviolet light for 20 min, soak in OTS (1vol%)-toluene solution for 30 min to prepare an OTS monolayer film, and dry at 120 °C for 5 min to remove organic matter. Finally, it was irradiated ...

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Abstract

The invention provides a method for preparing a bismuth ferrite film with dielectric property by adopting a liquid-phase self-assembly technology. The method comprises the following steps of: dissolving Bi(NO3)3.5H2O and Fe(NO3)3.9H2O which serve as raw materials into distilled water, and regulating the pH value of the solution by using glacial acetic acid; preparing a film by using citric acid as a complexing agent, using a functionalized self-assembly single-layer film as a template and suspending the template on the surface of the solution in a mode that the functionalized side of the template is downward through reverse adsorption; drying at room temperature, preserving the heat for 10 minutes at the temperature of 300 DEG C to remove organic substances, preserving the heat at the temperature of 550 DEG C and annealing to prepare a crystallized bismuth ferrite functional film, performing ultraviolet irradiation and reverse adsorption, drying and annealing; and repeating the steps till the bismuth ferrite functional film with the dielectric property is prepared. The bismuth ferrite film with the dielectric property is prepared by combining the advantages of liquid-phase self-assembly through multiple times of reverse adsorption and layer-by-layer annealing.

Description

technical field [0001] The invention belongs to the field of functional materials, and relates to a method for preparing a bismuth ferrite film with dielectric properties by a liquid phase self-assembly technology. Background technique [0002] In recent years, a new type of ferromagnetic electric material BiFeO 3 , as one of the few single-phase ferromagnetic materials with both ferroelectricity and magnetism at room temperature, has aroused great interest. BiFeO 3 The perovskite structure with a trigonal twist has a high Curie temperature (T C =810℃) and Neel temperature (T N =380℃), the electromagnetic coupling effect has extremely important application prospects in information storage, spintronic devices, magnetic sensors, and capacitor-inductor integrated devices. [0003] Currently for BiFeO 3 The preparation methods of thin films mainly include pulsed laser deposition method, magnetron sputtering method and so on. The advantage of the pulsed laser deposition met...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01G49/00
Inventor 谈国强尹君
Owner SHAANXI UNIV OF SCI & TECH
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