Memory device, manufacturing method thereof, and electronic equipment including the same

Abstract

Disclosed are a storage device, a manufacturing method thereof, and electronic equipment including the storage device. According to an embodiment, a memory device may include a plurality of memory cell layers sequentially stacked on a substrate, each memory cell layer includes an array of memory cells, and the memory cells in each memory cell layer are along the stacking direction of the memory cell layers are substantially aligned with each other. Each memory cell includes: a first source / drain layer, a channel layer, and a second source / drain layer stacked in sequence, wherein the channel layer includes a semiconductor material different from that of the first and second source / drain layers; and A memory gate stack is formed around the periphery of the channel layer. The memory gates of the memory cells in the same memory cell layer are stacked into one body. For each storage unit, its first source / drain layer is integrated with the second source / drain layer of the corresponding storage unit in the lower layer, and its second source / drain layer is integrated with the first source / drain layer of the corresponding storage unit in the upper layer.

Description

technical field [0001] The present disclosure relates to the field of semiconductors, and in particular, to a storage device based on a vertical type device, a manufacturing method thereof, and an electronic device including the storage device. Background technique [0002] In a horizontal type device such as a Metal Oxide Semiconductor Field Effect Transistor (MOSFET), the source, gate and drain are arranged in a direction substantially parallel to the surface of the substrate. Due to this arrangement, the horizontal type device cannot be easily further scaled down. Unlike this, in a vertical type device, the source, gate, and drain are arranged in a direction substantially perpendicular to the substrate surface. Therefore, vertical devices are easier to scale down than horizontal devices. [0003] However, for vertical devices, it is difficult to control the gate length, especially for single crystal channel materials. On the other hand, if a polycrystalline channel mat...

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Problems solved by technology

[0003] However, for vertical devices, it is difficult to control the gate length, especially for single crystal channel materials

On the other hand, if a polycrystalline channel material is used, the channel resistance is greatly increased compared to single crystal material, making it difficult to stack multiple vertical devices, as this would result in an excessively high resistance

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