Magnetron and semiconductor equipment

Abstract

The invention discloses a magnetron and semiconductor equipment. The magnetron comprises a magnet yoke, an inner magnetic pole, an outer magnetic pole, an inner magnetic pole element and an outer magnetic pole element, wherein the inner magnetic pole and the outer magnetic pole are arranged above the magnet yoke; the outer magnetic pole surrounds the circumference of the inner magnetic pole; the inner magnetic pole element is arranged above the inner magnetic pole; the outer magnetic pole is arranged above the outer magnetic pole; and a magnetic force line transmission surface of the inner magnetic pole element and a magnetic force line transmission surface of the outer magnetic pole element are slopes respectively. According to the magnetron disclosed by the invention, the magnetic force line transmission surface of the inner magnetic pole element and the magnetic force line transmission surface of the outer magnetic pole element are the slopes respectively and a magnetic field intensity horizontal component value of a magnetic force line enveloped edge area is increased, so that the corrosion depth of a target corresponding to the edge area is increased; the magnetic field intensity horizontal component value of a magnetic force line enveloped central area is reduced, so that the corrosion depth of a target corresponding to the central area is increased, and further, the width of a corrosion area on the target is increased and the depth of the corrosion area is reduced; and in addition, the utilization rate of the target and the uniformity of the corrosion area on the target are improved.

Description

technical field [0001] The invention relates to the technical field of microelectronics, in particular to a magnetron and semiconductor equipment. Background technique [0002] In the manufacturing process of semiconductor integrated circuits, sputtering technology (or physical vapor deposition PVD technology) is used to deposit various metal layers and related material layers. Because copper has the advantages of low resistivity and low electron mobility, the vertical interconnection of metal is generally copper interconnection, in which the metal material is sputter-deposited to a surface with an appropriate aspect ratio. through hole. figure 1 is a partial cross-sectional view of a vertical interconnection structure, such as figure 1 As shown, the vertical interconnection structure includes: a lower dielectric layer 1 , a conductive layer 2 , an upper dielectric layer 3 , a barrier layer 5 and a copper seed layer 6 . The lower dielectric layer 1 includes a conductive l...

AI Technical Summary

Problems solved by technology

To sum up, the magnetron adopts the inner magnetic pole piece and the outer magnetic pole piece whose upper surface is plane, and the horizontal component value of the magnetic field intensity in the edge area of ​​the envelope of the generated magnetic field line is small, while the horizontal component value of the magnetic field intensity in the central area is large, so that The target corresponding to the edge area has a smaller corrosion depth and the target corresponding to the central area has a larger corrosion depth, resulting in a narrower width and deeper corrosion area on the target, thereby reducing the utilization rate and Uniformity of etched area on the target

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