Glass corrosion composite mask structure and glass corrosion method

Abstract

The invention provides a glass corrosion composite mask structure and a glass corrosion method. The glass corrosion composite mask structure comprises a first metal priming coat layer, a first metal layer, a second metal priming coat layer, a second metal layer and a photoresist layer which are sequentially arranged from a glass substrate, wherein the first metal priming coat layer and the secondmetal priming coat layer are metal Cr layers; the first metal layer and the second metal layer are made of metal Au or metal Cu. According to the composite mask structure for glass corrosion, the glass corrosion depth can be increased, the bonding performance of masks and glass is good, and meanwhile the complex stress control problem of polycrystalline silicon and monocrystalline silicon can be avoided.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and more specifically relates to a composite mask structure for glass corrosion and a method for glass corrosion. Background technique [0002] Glass has a wide range of uses, and the masks used for etching include photoresist, Cr / Au, Ti / Au, silicon carbide, etc., but using these materials as masks, the etching depth of glass is small, generally less than 50 μm. In addition, it is reported in the literature that using polysilicon, amorphous silicon or single crystal silicon as a mask, the etching depth of glass is relatively large. For example, using LPCVD to deposit polysilicon as a mask, when the thickness of the mask is 500nm, a glass etching depth greater than 400μm can be obtained. Mask can obtain a glass etching depth greater than 500 μm. Before glass etching, this method needs to use anodic bonding to bond single crystal silicon and glass together, and then use plasma etching or ...

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Problems solved by technology

In addition, literature reports use polysilicon, amorphous silicon or single crystal silicon as a mask, and the glass corrosion depth is relatively large.

For example, using LPCVD to deposit polysilicon as a mask, when the thickness of the mask is 500nm, a glass etching depth greater than 400μm can be obtained. Mask can obtain a glass etching depth greater than 500 μm. Before glass etching, this method needs to use anodic bonding to bond single crystal silicon and glass together, and then use plasma etching or KOH solution etching to thin the silicon wafer. The method is expensive and time-consuming, and the bond has a large thermal stress

Zhang Zhaoyun, Institute of Electronic Engineering, China Academy of Engineering Physics and others proposed a method of using hydroxide catalytic bonding to bond glass and silicon wafers, using single crystal silicon as a mask to corrode glass (application number: 201710206914.7). Although the method can avoid the thermal stress caused by the anodic bonding temperature and is easy to operate, the bonding force between the glass and the silicon wafer is weak, and it is easy to detach, and the glass has a large lateral corrosion

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