Method for manufacturing memory resistor through three-dimensional maskless slurry direct writing forming and memory resistor
A technology of memristor and slurry, which is applied in the direction of electrical components, etc., can solve the problems of memristor design cost impact, etc., and achieve the effect of good product parameter consistency, simple process, and reduced manufacturing cost
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[0018] The preferred embodiments of the present invention will be described in further detail below in conjunction with the accompanying drawings.
[0019] The method of the present invention mainly includes the following steps:
[0020] 1. Research on slurry configuration and rheological properties.
[0021] The preparation of high-quality gel slurry is the basis of the whole slurry direct writing technology. To construct a gel slurry with a span of three-dimensional periodic structure needs to meet the following two conditions: First, the slurry must have good viscoelasticity, which means that the slurry can be extruded from the needle under shear stress Flow out, even if there is no support in the corresponding position of the lower layer, it can be cured immediately to maintain the predetermined grouting shape; secondly, the slurry must have a high solid volume content to minimize the shrinkage caused by drying, that is Said that the particle network must be able to resist shri...
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