Preparation method for chalcogenide semiconductor/carboxylation PPV (polyphenylene vinylene) electroluminescence composite material

A composite material and semiconductor technology, which is applied in the field of preparation of chalcogen semiconductor and carboxylated PPV derivative composite materials, can solve the problems of difficult dispersion of inorganic particles, phase separation of organic matter and inorganic particles, etc., so as to improve the photoelectric performance and luminous intensity , High luminous efficiency

Inactive Publication Date: 2012-08-01
HEFEI UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] By doping inorganic semiconductor materials, the photoelectric performance of polymer semiconductor materials can be greatly improved. However, pure inorganic particles are not easy to disperse in organic matter, and there is a serious phase separation phenomenon between organic matter and inorganic particles.

Method used

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  • Preparation method for chalcogenide semiconductor/carboxylation PPV (polyphenylene vinylene) electroluminescence composite material
  • Preparation method for chalcogenide semiconductor/carboxylation PPV (polyphenylene vinylene) electroluminescence composite material
  • Preparation method for chalcogenide semiconductor/carboxylation PPV (polyphenylene vinylene) electroluminescence composite material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] Embodiment 1: the preparation of ZnS / carboxylated PPV composite material

[0036] 1. Using p-cresol and 6-bromohexanoic acid as raw materials, synthesize carboxylated PPV—poly[2-methoxy-5-(5′- Carboxypentyloxy) p-phenylene vinylene].

[0037] 2. Add methanol and 0.2g carboxylated PPV to the Erlenmeyer flask, stir and dissolve completely, then add 0.32g zinc nitrate dropwise (zinc nitrate is dispersed in 30mL methanol) and react at 85°C for 1 hour to separate the complex and remove the complex The compound was washed with distilled water and dried, then dissolved in methanol and ultrasonically dispersed for 1 h. After the dispersion was uniform, the pH was adjusted to 10 with 1 mol / L NaOH, and 0.04 g of thiourea was added slowly (thiourea was dispersed in 30 mL of methanol). React in the kettle at 80°C for 6 hours, centrifuge to separate the solid matter, and dry in vacuum to obtain the ZnS / carboxylated PPV composite material.

Embodiment 2

[0038] Embodiment 2: Preparation of ZnS / carboxylated PPV composite material

[0039] The preparation method of this embodiment is the same as that of Example 1, and the difference is that Na 2 S is the sulfur source to prepare composite materials.

[0040] By comparison, it can be seen that the light-on voltage of the composite material can be reduced by 0.5-1v relative to pure PPV, and the luminous intensity of the electroluminescent device prepared by using the composite material as the light-emitting layer is higher than that of the electroluminescent device prepared by pure PPV as the light-emitting layer. Increased by 63%, and the start-up voltage is reduced by 1.2V.

Embodiment 3

[0041] Embodiment 3: the preparation of CdS / carboxylated PPV composite material

[0042] 1. Using p-cresol and 6-bromohexanoic acid as raw materials, synthesize carboxylated PPV—poly[2-methoxy-5-(5′- Carboxypentyloxy) p-phenylene vinylene].

[0043] 2. Add methanol and 0.2g carboxylated PPV into the Erlenmeyer flask, stir and dissolve completely, then add 0.32g cadmium chloride dropwise (cadmium chloride is dispersed in 30mL water and add dropwise), react at 85°C for 1 hour, separate the complex, and use Wash with distilled water and dry, dissolve the complex in methanol and ultrasonically disperse for 1 hour, slowly add methanol solution of thiourea after the dispersion is uniform, pour it into a hydrothermal kettle, react at 60°C for 6 hours, centrifuge to separate the solid matter, and dry in vacuum to obtain CdS / Carboxylated PPV composites.

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Abstract

The invention discloses a preparation method for a chalcogenide semiconductor/carboxylation PPV (polyphenylene vinylene) electroluminescence composite material. The electroluminescence composite material is prepared by means of complexation between semiconductor metal salt and carboxylation PPV firstly and then by means of hydrothermal reaction, the semiconductor metal salt is selected from soluble nitrate or halide of Zn, Cd, Pb or Bi, and the carboxylation PPV refers to poly[2-methoxy-5-(5'-carboxypentyloxy) p-phenyl acetylene]. The carboxylation PPV serving as an organic phase to be doped and composited with an inorganic semiconductor, and the carboxylation PPV is connected with the inorganic semiconductor by means of coordination bonds, so that inorganic particles are uniformly dispersed, the two phases form a uniform system, energy and charge transfer on the two phase interfaces is improved, the composite material has processibility of polymer and photoelectric property of semiconductor materials, and the novel electroluminescence material high in stability and luminous efficiency is provided for the fields such as large-area flexible display and solid-state luminescence and the like.

Description

1. Technical field [0001] The invention relates to the preparation of a novel electroluminescence material, specifically, a preparation method of a compound material of a chalcogen semiconductor and a carboxylated PPV derivative. 2. Background technology [0002] Conjugated polymers not only have the optoelectronic properties of semiconductors, but also have good processability and mechanical properties. They are excellent light-emitting materials, but their low carrier mobility limits their applications. Poly(p-phenylene vinylene) is the earliest conjugated polymer used in the field of electroluminescence. Due to its excellent photoelectric properties, it has been extensively researched and developed, but its poor stability and low luminous efficiency limit it. Applications. Inorganic semiconductors such as PbS, CdS, BiS, and ZnS have high electron mobility, unique optical, electrical, magnetic properties and geometric structures, and have become research hotspots. However...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C08G61/02C09K11/06H01L51/54
Inventor 徐卫兵李华华周正发任凤梅曾琳钧
Owner HEFEI UNIV OF TECH
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