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Semiconductor device including epitaxial region

A semiconductor and device technology, applied in the field of semiconductor device manufacturing

Active Publication Date: 2015-08-05
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For example, exposure of the sidewalls of the gate stack may result in unwanted epitaxial growth on the gate stack

Method used

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  • Semiconductor device including epitaxial region
  • Semiconductor device including epitaxial region
  • Semiconductor device including epitaxial region

Examples

Experimental program
Comparison scheme
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Embodiment Construction

[0030] It should be appreciated that the following disclosure provides a number of different embodiments or examples for implementing different features of the invention. Specific examples of components and arrangements are described below to simplify the present disclosure. Of course, these are examples only and are not intended to be limiting. Furthermore, the following description of a first component formed on, over, or adjacent to a second component may include embodiments in which the first and second components are in direct contact, and may also include embodiments in which additional components may be formed interposed between the first and second components. , such that the first and second components may not be in direct contact with each other. Various features may be arbitrarily drawn in different scales for simplicity and clarity.

[0031] figure 1 A method 100 of fabricating a semiconductor device is shown in . Method 100 begins at block 102, where a substra...

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Abstract

A method is described which includes providing a substrate and forming a first spacer material layer abutting a gate structure on the substrate. A second spacer material layer is formed adjacent and abutting the gate structure and overlying the first spacer material layer. The first spacer material layer and the second spacer material layer are then etched concurrently to form first and second spacers, respectively. An epitaxy region is formed (e.g., grown) on the substrate which includes an interface with each of the first and second spacers. The second spacer may be subsequently removed and the first spacer remain on the device decreases the aspect ratio for an ILD gap fill. An example composition of the first spacer is SiCN.

Description

technical field [0001] The present invention relates to the fabrication of semiconductor devices, and more particularly, to semiconductor devices including epitaxial regions. Background technique [0002] The semiconductor industry is making progress in the pursuit of higher device density, higher performance, and lower cost smaller technology node processes. One process for improved device performance includes creating source / drain epitaxial regions for enhanced transistor device performance. The epitaxial regions provide strained regions that enhance carrier mobility. [0003] However, problems may arise from the handling of growing epitaxial regions. These problems include growth of unnecessary epitaxial material on other areas of the device. For example, exposure of the sidewalls of the gate stack may result in unwanted epitaxial growth on the gate stack. Due to the shape of the growth, the growth may be characterized as "mushroom shaped". Contents of the invention...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/28H01L21/336H01L29/423H01L29/78
CPCH01L29/6659H01L29/165H01L21/823828H01L21/823871H01L29/66628H01L29/7848H01L29/66636H01L29/66545H01L29/6653H01L21/823864H01L21/823807H01L21/823814H01L29/7834H01L29/04H01L29/0649H01L29/6656H01L29/7833
Inventor 潘德人林育贤沈香谷范玮寒林昀靓黄益民王梓仲
Owner TAIWAN SEMICON MFG CO LTD