Method for filling micropores by utilizing tin whisker growth

A tin whisker and blind hole technology, applied in the field of microelectronics manufacturing and packaging, can solve problems such as filling holes

Active Publication Date: 2012-08-01
HUAZHONG UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For metal filling blind holes, defects such as voids often appear when filling holes due to the effect of gas in the holes and the surface tension of the metal with ordinary methods, so it is urgent to find a way to reduce or even eliminate these defects.

Method used

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  • Method for filling micropores by utilizing tin whisker growth
  • Method for filling micropores by utilizing tin whisker growth
  • Method for filling micropores by utilizing tin whisker growth

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Embodiment Construction

[0037] The present invention will be described in detail below in conjunction with the accompanying drawings.

[0038] Tin whisker is a single whisker that grows spontaneously on the surface of tin-containing coatings. Tin whiskers grow at different rates at different temperatures. Experiments have shown that when the current density increases to 10 4 A / cm 2 Electromigration will occur when electromigration occurs, and the accumulation of atoms near the anode increases the internal compressive stress of the tin coating and accelerates the growth of tin whiskers. Experiments have found that this phenomenon also exists for metals such as Cd, Zn, Al, and Ag. Based on this finding, the present invention attempts to use electromigration to accelerate whisker growth to fill micropores.

[0039] A method for filling blind vias with tin whisker growth, comprising the steps of:

[0040] (1) sequentially process the surface with blind holes on the substrate to deposit an adhesion l...

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Abstract

The invention provides a method for filling micropores by utilizing tin whisker growth. The method comprises the following steps: an adhesive layer and a metal layer are deposited on the surface of a substrate with blind holes or through holes, metal is deposited in the blind holes in an electroplating manner to the openings of the blind holes, and a cavity is naturally formed in the deposited metal; photoresist is coated on the surfaces of the blind holes or the through holes and between the adjacent blind holes or through holes in a spinning manner; the metal layer and the adhesive layer beyond the spinning coated photoresist are corroded to form a metal interconnection line communicating the blind holes or the through holes; and two ends of the metal interconnection line are connected with electrodes and electrified to make metal whiskers in the blind holes grow quickly till the whiskers fill the cavity or the metal layer whiskers grow quickly to fill the through holes. By adopting the method, the cavity reserved during electroplating of micro blind holes can be effectively filled, and the defect that electroplating solution with surface tension can not enter the micro blind holes to electroplate is avoided, so that through holes with smaller diameters can be filled.

Description

technical field [0001] The invention relates to the field of microelectronics manufacturing and packaging, in particular to a method for filling micropores by using tin whisker growth. Background technique [0002] As the overall thickness of the packaging structure remains constant or even decreases, the thickness of each layer of chips used in the chip stack inevitably needs to be reduced. Through-silicon via metal interconnection technology (TSV) is a vertical interconnection technology in a chip, and its electrical signal passes through the through hole of the silicon chip. Compared with the traditional planar metal interconnection line, TSV can significantly increase the packaging density. It has the advantages of saving space, reducing signal delay and improving chip performance. When the thickness of the silicon wafer is reduced, the silicon wafer is not easy to clamp, and must be attached to the glass substrate or blind holes must be drilled first and then thinned. ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/768
Inventor 刘胜汪学方吕植成袁娇娇徐春林师帅方靖
Owner HUAZHONG UNIV OF SCI & TECH
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