Shift register unit, shift register circuit, array substrate and display device

A shift register and circuit technology, applied in the fields of shift register circuits, array substrates, display devices, and shift register units, can solve the difference in TFT characteristics between backplanes, the drift of the gate threshold voltage Vth of TFT devices, and the influence of circuit output. end and other issues

Active Publication Date: 2012-08-08
BOE TECH GRP CO LTD
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AI Technical Summary

Problems solved by technology

[0003] Since the shift register circuit is directly made on the substrate through the backplane process, the instability in the backplane manufacturing process, especially in the LTPS (Low Temperature Poly-silicon, low temperature polysilicon technology) process, will cause the backplane The difference in TFT characteristics between TFT devices, especially the gate threshold voltage Vth of the TFT device will drift, which will lead to the failure of the shift register circuit
In addi

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  • Shift register unit, shift register circuit, array substrate and display device
  • Shift register unit, shift register circuit, array substrate and display device
  • Shift register unit, shift register circuit, array substrate and display device

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[0046] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0047] The transistors used in all embodiments of the present invention can be thin film transistors or field effect transistors or other devices with the same characteristics. Since the source and drain of the transistors used here are symmetrical, there is no difference between the source and the drain. of. In the embodiment of the present invention, in order to distinguish the two poles of the transistor except the gate, one pole is called the source, and t...

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Abstract

The invention provides a shift register unit, a shift register circuit, an array substrate and a display device and relates to the field of manufacturing of displays. Through the invention, the threshold value voltage drift of a grid electrode of a grid line driver transistor can be reduced, and the work stability of the device is improved. The shift register unit comprises a first transistor, a pull-up closing unit, a pull-up opening unit, a first pull-up unit, a second pull-up unit, a trigger unit and an output unit. The shift register unit, the shift register circuit, the array substrate and the display device are used for the manufacturing of the displays.

Description

technical field [0001] The invention relates to the field of liquid crystal display manufacture, in particular to a shift register unit, a shift register circuit, an array substrate and a display device. Background technique [0002] In recent years, the development of displays has shown a trend of high integration and low cost. One of the very important technologies is the mass production of GOA (Gate Driver on Array, array substrate row drive). Using GOA technology to integrate TFT (Thin Film Transistor, Thin Film Field Effect Transistor) gate switch circuit on the array substrate of the display panel to form a scan drive for the display panel, so that the gate drive integrated circuit part can be saved, which can not only The product cost is reduced in terms of material cost and manufacturing process, and the display panel can achieve a beautiful design with symmetrical sides and narrow borders. At the same time, since the Bonding process in the Gate direction can be om...

Claims

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Application Information

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IPC IPC(8): G09G3/36G02F1/1362G02F1/133
CPCG02F1/1362G02F1/133G09G3/36G11C19/28G02F1/13454G09G3/3611G09G2300/0408G09G2310/0286G11C19/287
Inventor 马占洁
Owner BOE TECH GRP CO LTD
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