Start method supporting bad block flash memory scanning

A flash memory and bad block technology used in the boot field that supports bad block flash scanning

Active Publication Date: 2012-08-15
SHANDONG SINOCHIP SEMICON
View PDF4 Cites 11 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, ECC can only verify and correct some very simple errors, and bad blocks cannot be repaired by ECC

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Start method supporting bad block flash memory scanning
  • Start method supporting bad block flash memory scanning
  • Start method supporting bad block flash memory scanning

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0021] Refer to the attached figure 1 , the system on chip (SoC, system on chip) includes the ARM core and the configured internal memory - ROM and RAM, in which the ROM stores the boot code and is used to guide the system on chip to start. It is generally connected to the non-flash memory controller through the on-chip bus, as shown in the figure The NAND flash controller supports multi-channel mode.

[0022] The NAND flash memory is connected to the system-on-chip through the flash memory controller to become an external memory and expand the memory.

[0023] The lower part of the figure shows the storage structure of the firmware, a startup method that supports bad block flash memory scanning, and allocates a storage space on the NAND flash memory for storing firmware, which is shown as the first 200 blocks of the NAND flash memory.

[0024] The firmware structure includes the firmware file header, and then the firmware code stored on the subsequent pages, where the firmwa...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a start method supporting bad block flash memory scanning, which comprises the following steps of: allocating a storage space to a NAND flash memory to store firmware; when downloading the firmware, firstly performing bad block scanning of the storage space, storing the downloaded firmware in a good block, and storing multiple backups; starting the NAND flash memory led in by host boot; searching for the firmware in the storage space according to the NAND flash memory sequentially scanned in host boot, performing error check on the found firmware, and then loading the firmware passing the error check; if the current firmware does not pass the error check or can not be corrected, sequentially searching for the next available firmware; and in the case of search overflow of the storage space, executing a start failure processing step. The start method supporting bad block flash memory scanning, disclosed by the invention, improves the probability of normal start of the NAND flash memory.

Description

technical field [0001] The invention relates to a method for loading and starting a program, in particular to a method for loading and starting a non-flash memory firmware. Background technique [0002] According to the technical requirements of NAND Flash, no more than 2% of bad blocks are allowed at the factory. The main purpose is to allow an acceptable proportion of bad blocks to increase production capacity and reduce production costs. Therefore, there will be some random bad blocks in the production of non-flash memory. In order to prevent data from being stored in these bad units, these bad blocks must first be identified, marked, isolated, and invisible to the user before the IC is burned, so this type of bad block will not affect the non-flash memory. use. [0003] In fact, there are two types of bad blocks, one is the above-mentioned bad blocks generated during production; the other is the bad blocks generated during use. For the latter, this is due to the fact ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): G11C29/32
Inventor 卢方勇李峰张洪柳王璞
Owner SHANDONG SINOCHIP SEMICON
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products