Forming method of semiconductor device

Abstract

The invention discloses a forming method of a semiconductor device. The forming method comprises the following steps of: respectively providing a substrate and a stamping mold, wherein the substrate comprises an insulating layer and a hard mask layer covering the insulating layer, and the stamping mold is at least provided with a first boss and a second boss which are different in height; carrying out stamping on the substrate by using the stamping mold, and enabling the inner part of the stamped substrate to have a first opening corresponding to the first boss and a second opening corresponding to the second boss; and forming a first groove in the substrate along the first opening, forming a second groove in the substrate along the second opening, wherein the depth of the first groove is less than the depth of the second groove. The forming process of the semiconductor device disclosed by the invention has the advantages that the first groove and the second groove can be formed in the same step, the position accuracy of the first groove and the second groove is high, the quality stability of the semiconductor device is good, and the cost for manufacturing the semiconductor device is lower.

Description

technical field [0001] The invention relates to semiconductor manufacturing technology, in particular to a method for forming a semiconductor device of a back-end thread. Background technique [0002] Semiconductor technology continues to move towards smaller process nodes driven by Moore's Law. With the continuous advancement of semiconductor technology, the functions of devices are becoming more and more powerful, but the difficulty of semiconductor manufacturing is also increasing day by day. The lithography technology is the most critical production technology in the semiconductor manufacturing process. As the semiconductor process node enters a lower node, the existing 193nm ArF light source lithography technology can no longer meet the needs of semiconductor manufacturing. Extreme ultraviolet lithography Technology (EUV), multi-beam maskless technology, and nanoimprint technology have become research hotspots for next-generation lithography candidate technologies. Ho...

AI Technical Summary

Problems solved by technology

[0009] In the method for forming the wire slots and through holes of the above-mentioned back-end threads, on the one hand, since the wire slots and through holes are formed by directly etching the substrate, the depth of the wire slots is smaller than the depth of the through holes, so it can only be formed first. trenches and then form via holes, or form via holes first and then form line grooves; Low K damage causes transmission delay in the back-end threading process, and the position accuracy of the formed wire grooves and via holes is low, and the forming process is complicated

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