Process for production of contact structure for organic semiconductor device, and contact structure for organic semiconductor device
A technology of organic semiconductors and organic semiconductor layers, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc., can solve the problems of organic semiconductor layer damage, poor reproducibility, and inability to reduce contact resistance, etc., to achieve the goal of reducing contact resistance Effect
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Embodiment 1
[0079] As Example 1, a figure 1 The organic transistor 10 is shown. Electrode 6 has a two-layer structure including charge injection layer 4 and current supply layer 5 . Specifically, a substrate in which a silicon oxide film 2 of 200 nm was formed on the surface of a highly doped silicon wafer 1 was used as the substrate. Here, highly doped silicon wafer 1 functions as a gate electrode, and silicon oxide film 2 functions as a gate insulating layer. After modifying the surface of the silicon oxide film 2 with phenylethyl trichlorosilane (Phenethyl trichlorosilane), pentacene as the organic semiconductor layer 3 was vacuum-deposited with a film thickness of 40nm, and formed thereon. Layer-structured electrodes 6 . The electrode 6 is constituted by evaporating 2 nm of Cu as the charge injection layer 4 on the organic semiconductor layer 3 and 38 nm of gold (Au) as the current supply layer 5 thereon. One of these two electrodes 6 is used as a source electrode S, and the othe...
Embodiment 2
[0092] In Example 2, the organic transistor 10 was fabricated in the same manner as in Example 1 except that the charge injection layer 4 was formed using Cu, Fe, Co, Be, Ni, Zn, Al, and Cr.
Embodiment 3
[0101] As Example 3, an organic transistor 10 having a structure having two-layer electrodes 6 having the same structure as Example 1 except for having Cu and Al as charge injection layers 4 was fabricated. The fabrication of the organic transistor 10 is all carried out in a vacuum evaporation device and a glove box inside which maintains an inert gas atmosphere, so that the organic transistor 10 is not exposed to the atmosphere once during the whole process of device fabrication. That is, the treatment has been performed in an atmosphere in which no oxygen exists. Thereafter, after taking out the completed organic transistor 10 having a contact structure and leaving it under the atmosphere for 4 hours, electrical characteristics were measured.
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