Local site exposure apparatus
A technology of partial exposure and light source, applied in the exposure device of photolithography process, microlithography exposure equipment, optics, etc., can solve the problem of pattern pattern spacing deviation, etc., and achieve easy adjustment, suppression of deviation and uniformity of line width and spacing Improved effect
Active Publication Date: 2012-09-19
TOKYO ELECTRON LTD
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Problems solved by technology
[0011] However, as described above, regarding the half-exposure process using the resist pattern R formed with the thick film R1 and the thin film R2, when the resist pattern R is formed, its film thickness is not uniform within the substrate surface. , there is a problem that the line width of the formed pattern and the spacing between the patterns deviate
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Embodiment Construction
[0059] Hereinafter, one Embodiment which concerns on the partial exposure apparatus of this invention is demonstrated based on drawing. figure 1 It is a perspective view which shows the whole schematic structure of the partial exposure apparatus 1 which concerns on this invention. in addition, figure 2 is from with figure 1 The perspective view which observed the partial exposure apparatus 1 from a different angle is a figure which shows the state which carried in the glass substrate G which is a substrate to be processed. in addition, image 3 yes figure 2 A-A arrow direction sectional view. in addition, Figure 4 It is a figure which schematically shows the arrangement|positioning of the partial exposure apparatus 1 in a photolithography process.
[0060] For example Figure 4 (a)~(c) are shown respectively, Figure 1 to Figure 3 The shown partial exposure apparatus 1 is disposed in a module that performs a series of photolithography steps while horizontally tran...
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A local site exposure apparatus can easily adjust the amount of light exposure every area set finer within a substrate plane, enhance the uniformity of a residual resist film subsequent to development, and suppress variations in line width of each wiring pattern and pitch therebetween.The local site exposure apparatus has a light source having a plurality of light-emitting elements arranged above a substrate conveyance path in a direction interesting a substrate conveyance direction, a light-emission drive unit for selectively driving for light emission the light-emitting elements of the light source, with one or plural light-emitting elements as a unit of light-emission control, and illumination detecting means retractably provided in a widthwise direction of the substrate along a position at which to apply light from the light source to the substrate in a state in which the substrate is not conveyed below the light source, the illumination detecting means for detecting illumination of the light emitted from the light source, and a control part storing the relationship between the illumination detected by the illumination detecting means and a value of a drive current of each light-emitting element as a correlation table and controlling the drive of the light-emission drive unit to the light-emitting elements.
Description
technical field [0001] The present invention is a partial exposure device for performing partial exposure treatment on a substrate to be processed on which a photosensitive film has been formed. Background technique [0002] For example, in the manufacturing process of an FPD (Flat Panel Display), a circuit pattern is formed by a so-called photolithography process. [0003] In this photolithography process, as also described in Patent Document 1, after forming a predetermined film on a substrate to be processed such as a glass substrate, a photoresist (hereinafter referred to as resist) is applied, and by applying The pre-drying treatment (drying under reduced pressure and pre-baking treatment) in which the solvent in the resist evaporates forms a resist film (photosensitive film). Then, the resist film is exposed to light corresponding to the circuit pattern, and the resist film is developed to form a pattern. [0004] In addition, regarding this photolithography process,...
Claims
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IPC IPC(8): G03F7/20
CPCG03F7/70008G03F7/70391G03F7/70425G03F7/70791G03F7/7085
Inventor 森山茂牧哲也田中茂喜
Owner TOKYO ELECTRON LTD