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An organic resistance random access memory unit, an organic resistance random access memory and a preparation method thereof

A memory cell and memory technology, which are applied in the field of memory and its preparation, and organic resistance variable memory cell, can solve problems such as high cost and process complexity, and achieve the effect of increasing cost and process complexity and eliminating misreading.

Inactive Publication Date: 2012-10-10
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Abstract
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  • Application Information

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Problems solved by technology

In the process of realizing the present invention, the applicant realized that the prior art has the following technical problems: eliminating the organic resistance variable memory by connecting diodes in series increases the cost and process complexity

Method used

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  • An organic resistance random access memory unit, an organic resistance random access memory and a preparation method thereof
  • An organic resistance random access memory unit, an organic resistance random access memory and a preparation method thereof
  • An organic resistance random access memory unit, an organic resistance random access memory and a preparation method thereof

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preparation example Construction

[0028] In a further embodiment of the organic resistive memory cell of the present invention, the high work function material is a high work function metal, an organic complex or an organic conductor. Among them: metals with high work function include: Au, Pt; organic complexes with high work function include: copper Cu-TCNQ or silver Ag-TCNQ with tetracyanoquinodimethane; high work function The organic conductors include: 3,4-ethylenedioxythiophene / polystyrenesulfonate PEDOT:PSS. For the anode layer: its thickness is between 20nm and 100nm; its preparation method is one of the following methods: evaporation method, magnetron sputtering method, inkjet printing method or spin coating method. The low work function material is a metal with a low work function, and the metal with a low work function includes: Ca, Mg, Al. For the cathode layer, its thickness is between 20nm and 100nm; its preparation method is one of the following methods: evaporation method, magnetron sputtering ...

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Abstract

The invention discloses an organic resistance random access memory unit, an organic resistance random access memory and a preparation method thereof. The organic resistance random access memory unit, has an anode made of high-work-function metal or electrically conductive polymer and a cathode made of low-work-function metal. An Ohmic contact is formed between the anode and an organic semiconductor layer while a Schottky contact is formed between the cathode and the organic semiconductor layer, and therefore the organic resistance random access memory unit possesses a self-rectifying property. The organic resistance random access memory unit, the organic resistance random access memory and the preparation method thereof solve a problem of misreading of the organic resistance random access memory unit without obviously increasing cost and process complexity.

Description

technical field [0001] The invention relates to the technical field of memory in the microelectronics industry, in particular to an organic resistance variable memory unit, a memory and a preparation method thereof. Background technique [0002] With the deepening of information technology, electronic products have entered every aspect of people's life and work. In daily life, people's demand for low-cost, flexible, low-weight, and portable electronic products is increasing. Conventional devices and circuits based on inorganic semiconductor materials are difficult to meet these requirements. Therefore, the organic integrated circuit technology based on semiconductor materials such as organic polymers and small organic molecules that can realize these characteristics has received more and more attention under this trend. Organic resistive memory has broad application prospects in the field of organic electronics. [0003] Organic resistive memory generally has symmetrical ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/30H01L51/10H01L51/05G11C11/56H01L51/40
Inventor 刘明王宏姬濯宇商立伟陈映平王艳花韩买兴刘欣
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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