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Nonvolatile storage element and method for manufacturing same

A technology of non-volatile storage and manufacturing method, which is applied in the field of non-volatile semiconductor elements, can solve the problems of reliability reduction and resistance value deviation of resistance change elements, and achieves reduction of electric pulse voltage and resistance value deviation. Effect

Active Publication Date: 2012-10-17
PANASONIC SEMICON SOLUTIONS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

That is, there is a problem that a special circuit for generating a high-voltage electric pulse is required in addition to a circuit for generating a normal electric pulse
[0015] And, to solve this problem, although the electric pulse voltage required for the initial breakdown can also be reduced by reducing the film thickness of the high-concentration layer of the resistance variable layer, but from the reliability of the nonvolatile memory element and the device using it From the viewpoint of performance, it is not desirable to reduce the film thickness of the high-concentration layer of the variable resistance layer.
That is, if the film thickness of the high-concentration layer of the variable resistance layer is reduced in order to reduce the electric pulse voltage required for initial breakdown, there is a problem that the resistance value of the variable resistance element varies and the reliability decreases.

Method used

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  • Nonvolatile storage element and method for manufacturing same
  • Nonvolatile storage element and method for manufacturing same
  • Nonvolatile storage element and method for manufacturing same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0061] [Structure of nonvolatile memory element]

[0062] figure 1 It is a cross-sectional view showing a structural example of the nonvolatile memory element according to Embodiment 1 of the present invention.

[0063] figure 1 The shown nonvolatile memory element 100 is a variable resistance nonvolatile memory element, and has a substrate 101, an oxide layer 102 as an insulating layer formed on the substrate 101, and an oxide layer 102 formed on the oxide layer 102. The fixed resistance layer 108 and the variable resistance element 104 a formed on the fixed resistance layer 108 .

[0064] The variable resistance element 104a is composed of a first electrode layer 103 as a first electrode, a second electrode layer 105 as a second electrode, and a variable resistance layer 104 sandwiched between the first electrode layer 103 and the second electrode layer 105 . As an example, such as figure 1 As shown, the first electrode layer 103, the variable resistance layer 104, and ...

Deformed example 1

[0120] Figure 11 It is a cross-sectional view showing a structural example of a nonvolatile memory element according to Modification 1 of Embodiment 1 of the present invention. Also, for figure 1 The same elements are denoted by the same reference numerals and detailed description thereof will be omitted.

[0121] Figure 11 The nonvolatile storage element 150 shown with figure 1 The nonvolatile memory element 100 shown is different in that it has a variable resistance element 154 a obtained by inverting the variable resistance element 104 a in the nonvolatile memory element 100 upside down.

[0122] Specifically, Figure 11 The illustrated nonvolatile memory element 150 has an oxide layer 102 formed on a substrate 101 , a fixed resistance layer 108 formed on the oxide layer 102 , and a resistance change element 154 a formed on the fixed resistance layer 108 . Furthermore, the variable resistance element 154a is composed of the second electrode layer 105 as the second el...

Deformed example 2）

[0127] Figure 12 It is a cross-sectional view showing a structural example of a nonvolatile memory element according to Modification 2 of Embodiment 1 of the present invention. Also, for figure 1 The same elements are denoted by the same reference numerals and detailed description thereof will be omitted.

[0128] Figure 12 The structure of the nonvolatile memory element 300 is shown with figure 1 The nonvolatile memory element 100 shown is different in that the fixed resistance layer 308 is laminated on the second electrode layer 105 of the variable resistance element 104a. which is, Figure 12 The illustrated nonvolatile memory element 300 has an oxide layer 102 formed on a substrate 101, a resistance change element 104a formed on the oxide layer 102, and a fixed resistance layer 308 formed on the resistance change element 104a.

[0129] The variable resistance element 104a is made of a transition metal oxide similarly to Embodiment 1, and has a first electrode layer ...

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Abstract

A nonvolatile storage element of the present invention is provided with a variable resistance element (104a), which has: a first electrode layer (103); a second electrode layer (105); and a variable resistance layer (104), which is disposed between the first electrode layer (103) and the second electrode layer (105), and which has a resistance value reversibly varied on the basis of electrical signals applied to between the first electrode layer (103) and the second electrode layer (105). The variable resistance element is also provided with a fixed resistance layer (108), which has a predetermined resistance value, and which is laminated on the variable resistance layer (104). The variable resistance layer (104) has an oxygen-deficient first transition metal oxide layer (106), and a second transition metal oxide layer (107), which has an oxygen content rate higher than that of the first transition metal oxide layer (106), and the predetermined resistance value is 70-1,000 Ohm.

Description

technical field [0001] The present invention relates to a nonvolatile semiconductor element, a method for manufacturing the same, and a design support method for a nonvolatile memory element, and more particularly, to a variable resistance nonvolatile semiconductor memory element whose resistance value is changed by application of a voltage pulse, and its manufacturing method, etc. Background technique [0002] In recent years, with the development of digital technology, electronic devices such as portable information devices and information home appliances have further achieved higher functionality. Therefore, the demand for increasing the capacity of the variable resistance element, reducing the writing power, speeding up the writing / reading time, and increasing the lifespan is increasing. [0003] In response to these requirements, it can be said that there is a limit to the miniaturization of the conventional flash memory using a floating gate. In contrast, in a variab...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/105G11C13/00H01L45/00H01L49/00H10B99/00
CPCG11C2213/72G11C13/0007H01L45/146H01L45/1233H10N70/826H10N70/8833
Inventor 米田慎一三河巧
Owner PANASONIC SEMICON SOLUTIONS CO LTD