Non-volatile memory element and non-volatile memory device equipped with same

Abstract

Disclosed are: a non-volatile memory element in which the voltage of an electric pulse necessary for initial brake down can be reduced and the fluctuation in resistivity values can also be reduced; and a non-volatile memory device equipped with the non-volatile memory element. The non-volatile memory element comprises a first electrode (103), a second electrode (105), and a resistance-varying layer (104) which is intercalated between the first electrode (103) and the second electrode (105) and in which the resistivity value can vary reversibly depending on an electric signal delivered between the first electrode (103) and the second electrode (105), wherein the resistance-varying layer (104) comprises a first region (106) which is in contact with the first electrode (103) and contains an oxygen-deficient transition metal oxide and a second region (107); which is in contact with the second electrode (105) and contains a transition metal oxide having a smaller degree of oxygen deficiency than that of the first region (106). The second electrode (105) is composed of an alloy of iridium and at least one noble metal having a lower Young's modulus than that of iridium, and has an iridium content of 50 atm% or more.

Description

technical field [0001] The present invention relates to a variable resistance nonvolatile semiconductor memory element whose resistance value changes when a voltage pulse is applied, and a nonvolatile memory device having the same. Background technique [0002] In recent years, with the development of digital technology, electronic equipment such as portable information equipment and information home appliances have become more highly functional. Therefore, there is an increasing demand for increasing the capacity of the variable resistance element, reducing the writing power, increasing the writing / reading time, and extending the life. [0003] With respect to these requirements, it can be said that there is a limit to the refinement of flash memory (flash memory) using conventional floating gates (floating gate). On the other hand, in the case of a variable resistance element (variable resistance memory) using a variable resistance layer as a material of a memory portion,...

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Problems solved by technology

[0003] With regard to these requirements, it can be said that there is a limit to the refinement of flash memory (flash memory) using the existing floating gate (floating gate)

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