Phase change storage device and manufacturing method thereof
A phase-change storage and manufacturing method technology, applied in the phase-change storage device and its fabrication, and the field of semiconductor devices having the phase-change storage device, can solve the problem that the resistance value is prone to deviation, reduce the stability of the phase-change storage unit, and reduce the Data reading accuracy and other issues
Active Publication Date: 2021-05-11
YANGTZE ADVANCED MEMORY INDUSTRIAL INNOVATION CENTER CO LTD
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[0002] In phase-change memory devices, phase-change memory cells with multiple resistance states of multi-level cells (multi-level cells, MLC) or triple-level cells (triple-level cells, TLC) (or more level cells) It has a high storage density, but because the resistance state or state resistance range of the resistance value representing the storage value in the variable resistance layer in the existing phase change memory device is prone to deviation, the reading accuracy of the data is reduced , which in turn reduces the stability of the phase-change memory cell with multi-level or three-level cells (or higher-level cells) with multiple resistance states
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[0051] In order to make the object, technical solution and effect of the present invention more clear and definite, the present invention will be further described in detail below with reference to the accompanying drawings and examples. It should be understood that the specific embodiments described here are only used to explain the present invention, and the word "embodiment" used in the description of the present invention is meant to be used as an example, illustration or illustration, and is not intended to limit the present invention.
[0052] Please refer to figure 1 , which is a schematic diagram of a phase change memory cell 10 in a phase change memory device according to an embodiment of the present invention. The phase-change memory device includes a plurality of phase-change memory cells 10, and each phase-change memory cell 10 includes a first electrode line 11, a storage layer 12, and a second electrode line 13. The storage layer 12 is disposed on the first elec...
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The invention provides a phase change storage device and a manufacturing method thereof. According to the phase change storage device, a crystal seed dopant is doped in a variable resistance layer included in the phase change storage device, so that the crystallization speed can be increased, and the resistance change of the variable resistance layer can be stabilized by further enabling the crystal seed dopant to have gradient change in the variable resistance layer. The resistance value deviation phenomenon representing the resistance value state of the storage value is reduced.
Description
technical field [0001] The invention relates to the field of semiconductors, in particular to a phase-change memory device, a manufacturing method thereof, and a semiconductor device having the phase-change memory device. Background technique [0002] In a phase-change memory device, although a phase-change memory cell having multiple resistance states of a multi-level cell (MLC) or a triple-level cell (TLC) (or more level cells) It has a high storage density, but because the resistance state or the state resistance range of the resistance value representing the storage value in the variable resistance layer in the existing phase change memory device is prone to deviation, the reading accuracy of the data is reduced , thereby reducing the stability of the phase-change memory cell with multi-level or three-level cells (or higher-level cells) having multiple resistance states. Therefore, it is necessary to provide a phase change memory device and a manufacturing method thereo...
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Login to View More IPC IPC(8): H01L45/00H01L27/24
CPCH10B63/84H10N70/231H10N70/8828H10N70/043
Inventor 杨海波刘峻
Owner YANGTZE ADVANCED MEMORY INDUSTRIAL INNOVATION CENTER CO LTD