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Semiconductor apparatus and manufacturing method thereof

A manufacturing method and semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc., can solve problems such as poor voltage division accuracy, input voltage deviation, inability to release or detect voltage, etc. The effect of reducing variation in resistance value

Inactive Publication Date: 2019-10-08
SII SEMICONDUCTOR CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

If the voltage division accuracy of the bleeder resistor circuit is poor, the input voltage to the error amplifier will deviate, so the specified release or detection voltage cannot be obtained.

Method used

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  • Semiconductor apparatus and manufacturing method thereof
  • Semiconductor apparatus and manufacturing method thereof
  • Semiconductor apparatus and manufacturing method thereof

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Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0061] Embodiments of the present invention will be described below with reference to the drawings.

[0062] figure 1 It is a plan view of the thin-film resistor of the semiconductor device according to the first embodiment of the present invention. The thin film resistor 200 has a high resistance region 100 and low resistance regions 103 formed at both ends of the high resistance region 100 . The high-resistance region 100 is composed of a first high-resistance region 101 and a second high-resistance region 102, and is formed on both sides of the short-side direction (first direction, BB' direction) of the second high-resistance region 102 formed into a rectangle. A first high resistance region 101 is formed in contact. The first high-resistance region 101 and the second high-resistance region have the same length in the long-side direction (second direction, AA' direction) perpendicular to the short-side direction, and the two lengthwise directions of the first high-resis...

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PUM

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Abstract

The invention relates to a semiconductor apparatus and a manufacturing method thereof. A thin film resistor (200) includes a high-resistance region (100) and low-resistance regions (103) which are formed at both ends of the high-resistance region (100). The high-resistance region (100) includes first high-resistance regions (101) and a second high-resistance region (102), and the first high-resistance regions (101) are formed to be in contact with both ends of the second high-resistance region (102) formed in a rectangular shape in a transverse direction (first direction) of the second high-resistance region. In a longitudinal direction (second direction) orthogonal to the transverse direction, the first high-resistance regions (101) have the same length as that of the second high-resistance region, and both end surfaces of the first high-resistance regions (101) in the longitudinal direction are flush with both end surfaces of the second high-resistance region in the longitudinal direction to form flat planes.

Description

technical field [0001] The present invention relates to a semiconductor device, and in particular, to a semiconductor device having a thin-film resistor and a method of manufacturing the semiconductor device having a thin-film resistor. Background technique [0002] In an analog IC (analog integrated circuit) such as a voltage detector, a bleeder resistor composed of a plurality of polysilicon resistors is generally used. [0003] For example, taking a voltage detector as an example, the voltage is detected by comparing the reference voltage generated in the reference voltage circuit with the divided voltage divided in the bleeder resistor circuit by using an error amplifier. Therefore, the accuracy of the divided voltage after being divided in the bleeder resistor circuit becomes extremely important. If the voltage division accuracy of the bleeder resistor circuit is poor, the input voltage to the error amplifier will vary, so that a predetermined release or detection volt...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/64H01L21/324H01L21/3215H10N97/00
CPCH01L28/20H01L23/647H01L21/32155H01L21/324H01L21/265H01L27/0629H01L21/0273H01L21/31105H01L21/3205H01L21/28035H01L21/02532H01L21/02595H01L21/308H01L21/26513H01L21/266H01L21/02488
Inventor 鹰巢博昭
Owner SII SEMICONDUCTOR CORP