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A kind of method for preparing p-n junction of thin film solar cell

A technology of solar cells and thin films, which is applied in the manufacture of circuits, electrical components, and final products. It can solve problems affecting the production cost and service life of thin-film solar cells, affect the adhesion of films, and prolong the production cycle, so as to shorten the production cycle. The effect of rich raw materials and avoiding pollution

Inactive Publication Date: 2014-10-29
HUAZHONG UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the production of solar cells, the superimposition of multi-layer films, there is a stress problem between the films, which affects the adhesion of the films, which in turn affects the production cost and service life of thin-film solar cells
At the same time, the preparation of the traditional p-n / p-i-n junction needs to introduce complex doping process, which increases the production cost and prolongs the production cycle

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] (1) Clean the substrate of transparent conductive glass and dry it with nitrogen;

[0043] (2) Place the cleaned and dried substrate on the substrate stage in the cavity of the plasma chemical vapor deposition system;

[0044] (3) Weigh 4.75g and 12.4g of stannous chloride and sodium thiosulfate respectively, place them in two crucibles, and put them into the raw material evaporation device of the plasma chemical vapor deposition system;

[0045](4) Close the cavity of the plasma chemical vapor deposition system and evacuate to 6×10-3Pa;

[0046] (5) 30 sccm of argon gas is introduced at a pressure of 40 Pa to generate argon plasma;

[0047] (6) Use argon plasma to clean the cavity of the plasma chemical vapor deposition system and the substrate in the cavity. The processing time is 20 minutes, and the power of the argon plasma is 30W;

[0048] (7) Turn on the heating device on the substrate table to heat the substrate at a temperature of 300°C;

[0049] (8) Turn on ...

Embodiment 2

[0055] (1) Clean the substrate as quartz glass and dry it with nitrogen;

[0056] (2) Place the cleaned and dried substrate on the substrate stage in the cavity of the plasma chemical vapor deposition system;

[0057] (3) Weigh 4.75g and 1.6g of stannous chloride and elemental sulfur respectively, place them in two crucibles, and put them into the raw material evaporation device of the plasma chemical vapor deposition system;

[0058] (4) Close the cavity of the plasma chemical vapor deposition system and evacuate to 2×10-4Pa;

[0059] (5) 50 sccm of argon gas is introduced at a pressure of 50 Pa to generate argon plasma;

[0060] (6) Use argon plasma to clean the cavity of the plasma chemical vapor deposition system and the substrate in the cavity. The processing time is 30 minutes, and the power of the argon plasma is 50W;

[0061] (7) Turn on the heating device on the substrate table to heat the substrate at a temperature of 350°C;

[0062] (8) Turn on the raw material e...

Embodiment 3

[0068] (1) Clean the substrate of transparent conductive glass and dry it with nitrogen;

[0069] (2) Place the cleaned and dried substrate on the substrate stage in the cavity of the plasma chemical vapor deposition system;

[0070] (3) Weigh 1.3g and 3.75g of tin tetrachloride and sodium thiosulfate respectively, place them in two crucibles, and put them into the raw material evaporation device of the plasma chemical vapor deposition system;

[0071] (4) Close the cavity of the plasma chemical vapor deposition system, and evacuate to 8×10-3Pa;

[0072] (5) 40 sccm of argon gas is introduced at a pressure of 50 Pa to generate argon plasma;

[0073] (6) Use argon plasma to clean the cavity of the plasma chemical vapor deposition system and the substrate in the cavity. The processing time is 25 minutes, and the power of the argon plasma is 50W;

[0074] (7) Turn on the heating device on the substrate table to heat the substrate at 250°C;

[0075] (8) Turn on the raw material...

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PUM

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Abstract

The invention discloses a method for preparing a thin-film solar cell p-n junction. The method includes the following steps of cleaning a substrate, drying the substrate by nitrogen, placing the substrate on a substrate table in a cavity of a plasma chemical vapor deposition system, placing a raw material containing tins and a raw material containing sulfurs into two crucibles respectively, placing the two crucibles into a raw material evaporation device of the plasma chemical vapor deposition system, closing the cavity, vacuumpumping, feeding argon to produce an argon plasma, subjecting the cavity of the plasma chemical vapor deposition system and the substrate in the cavity to a cleaning treatment by the argon plasma, heating the substrate, preparing an n type tin sulfur film and a p type tin sulfur film on the substrate surface which is cleaned, subjecting the prepared n type and the p type tin sulfur films to a vacuum annealing in the cavity of the plasma chemical vapor deposition system, and cooling the n type and the p type tin sulfur films subjected to the annealing treatment in an argon environment to the room temperature. The method is simple in preparing process and can meet a requirement of a large area and high speed deposition.

Description

technical field [0001] The invention belongs to the technical field of thin-film solar cells, and more specifically relates to a method for preparing a solar cell p-n junction. Background technique [0002] Compared with traditional fossil energy, solar energy is a clean and renewable energy, so solar cells based on the photovoltaic effect are getting more and more attention. The thin film technology of the absorbing layer occupies a very important position in the research and production of high-efficiency and low-cost solar cells. With the research and development of solar cells, more and more attention has been paid to cheap and efficient photoelectric conversion materials. Tin sulfide is a non-toxic and environmentally friendly photoelectric material, and its direct optical bandgap is 1.3eV, which is close to the optimal bandgap of solar cell materials, 1.5eV. It also has a large light absorption coefficient, and its theoretical energy conversion efficiency can reach Re...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/04H01L31/18
CPCY02P70/50
Inventor 刘明海程莉莉王士才王曼星
Owner HUAZHONG UNIV OF SCI & TECH