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Tunable external-cavity semiconductor laser

A semiconductor and laser technology, applied in the field of tunable external cavity semiconductor lasers, can solve the problem that the output wavelength is not linearly tuned or changed, etc.

Active Publication Date: 2014-08-06
SHENZHEN INST OF ADVANCED TECH CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The current mainstream Littrow structure and Littman-Metcalf structure are both based on gratings, but they all have some defects: the direction of their output beams changes with the tuning of the wavelength; their output wavelength is not linearly tuned

Method used

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Embodiment Construction

[0020] In order to make the objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0021] figure 1 It is a schematic diagram of the structure of a tunable external cavity semiconductor laser in an embodiment. The tunable external cavity semiconductor laser 100 includes semiconductor optical amplifiers 10 sequentially arranged along the laser output optical path and quasi-conductor optical amplifiers sequentially arranged on the optical path of the semiconductor optical amplifier 10 emitting laser light. A straight lens 20 , a Fabry-Perot filter 30 rotatable around a rotation axis 32 , a first complete reflection mirror 40 , a partial reflection mirror 50 and a second complete reflection mirror 60 .

[0022] The laser light emitted by the semiconductor optical amplifier 10 first passes through the collimating lens 20 and th...

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Abstract

The invention relates to a tunable external-cavity semiconductor laser, comprising a semiconductor light amplifier, and the following components orderly arranged on a light path of the semiconductor light amplifier emitting laser: a collimating lens, a rotatable Fabry-Perot light filter, a first perfectly reflecting mirror, a partially reflecting mirror and a second perfectly reflecting mirror; and the partially reflecting mirror is perpendicular to the light path of the laser emitted via the first perfectly reflecting mirror. The tunable external-cavity semiconductor laser further comprises an actuator fixedly connected with the partially reflecting mirror, wherein the actuator comprises a contact plane parallel to the partially reflecting mirror; one end of the Fabry-Perot light filter is lapped on the contact plane; and the actuator moves in the direction of the normal line of the partially reflecting mirror so as to change the included angle between the Fabry-Perot light filter and the light path of the laser. The tunable external-cavity semiconductor laser can be tuned without influence on the light path; the direction of output laser beam can not be changed along with the tuning of the wavelength; and continuous tuning of the wavelength can be realized.

Description

【Technical field】 [0001] The invention relates to a semiconductor laser, in particular to a tunable external cavity semiconductor laser. 【Background technique】 [0002] In 1964, the world's first external cavity semiconductor laser experiment was verified by Crowe and Craig. In 1981, Fleming and Mooradian published the first article detailing the characteristics of external-cavity tunable semiconductor lasers. Since then, research on external-cavity semiconductor lasers has become active worldwide. Today, the research hotspots of external cavity semiconductor lasers have shifted to large-scale continuous tuning, frequency stability and expanded applications, and their products are widely used in frequency division multiplexing and coherent optical communication systems. [0003] At present, a variety of structures have been developed for external cavity tunable semiconductor lasers. Although they are different, their design principles are the same, that is, to insert a ligh...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/14H01S5/06
Inventor 肖啸于峰崎
Owner SHENZHEN INST OF ADVANCED TECH CHINESE ACAD OF SCI
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