Insulated gate bipolar transistor-driven protective circuit

A bipolar transistor, driving protection circuit technology, applied in emergency protection circuit devices, electrical components, adjusting electrical variables and other directions, can solve the problems of false alarm short circuit fault, slow voltage drop, tailing and so on

Active Publication Date: 2012-11-28
SHENZHEN INVT ELECTRIC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, in the drive circuit of high-voltage and high-power IGBT, the voltage of collector and emitter (Vce) drops slowly during the process of turning on the IGBT, and there is a phenomenon of tailing.

Method used

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  • Insulated gate bipolar transistor-driven protective circuit

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Embodiment Construction

[0071] The embodiment of the present invention provides an IGBT drive protection circuit, so as to avoid false reporting of a short-circuit fault.

[0072] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.

[0073] The terms "first", "second", "third", "fourth", etc. (if any) in the description and claims of the present invention and the above drawings are used to distinguish similar objects and not necessarily Describe a specific order or sequence. It is to be understood that the data so used are interchangeable under ap...

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PUM

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Abstract

The embodiment of the invention discloses an insulated gate bipolar transistor-driven protective circuit which comprises a signal transmission circuit, a gate pole driving circuit, a voltage detecting circuit and a blocking time setting circuit, wherein the signal transmission circuit is used for transmitting a driving signal to the gate pole driving circuit; the gate pole driving circuit is used for amplifying the driving signal from the signal transmission circuit, and then driving an insulated gate bipolar transistor to act through the amplified driving signal; the voltage detecting circuit is used for transmitting a fault indicator signal to the blocking time setting circuit once the voltage between a collecting electrode and an emitting electrode of the insulated gate bipolar transistor is detected over a set voltage threshold, wherein the voltage threshold is more than the driving voltage of the insulated gate bipolar transistor; the blocking time setting circuit is used for transmitting a locking signal to the signal transmission circuit after receiving the fault indicator signal from the voltage detecting circuit; and the signal transmission circuit also can be used for blocking and outputting the driving signal to the gate pole driving circuit after receiving the locking signal from the blocking time setting circuit. With adoption of the insulated gate bipolar transistor-driven protective circuit, misinformation of a short circuit fault can be avoided.

Description

technical field [0001] The invention relates to the technical field of power electronics, in particular to an insulated gate bipolar transistor drive protection circuit. Background technique [0002] In power electronic devices such as inverters, uninterruptible power systems (Uninterruptable Power System, UPS), etc., the insulated gate bipolar transistor (Insulated Gate Bipolar Transistor, IGBT) is used as its main power switching device, and its work (including drive and protection) The reliability will directly affect the reliability of the entire power electronic device. The driving power of IGBT is small and the saturation voltage is low, so it is widely used in various power changes. [0003] A reliable IGBT drive circuit is a long-term research topic in the industry. Compared with low-voltage IGBT, the drive circuit of high-voltage high-power IGBT requires higher insulation withstand voltage level, larger drive current and more reliable protection performance. At p...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H02H7/20H02M3/335G01R19/165
Inventor 林琳张波
Owner SHENZHEN INVT ELECTRIC
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