Plasma Processing Device And Cooling Device For Plasma Processing Devices

Abstract

Provided is a plasma processing device that can cool a planar antenna or dielectric window uniformly in the circumferential direction. A coolant channel (145) for cooling a dielectric window (105) is provided on a side wall (140) of a processing container (100) of the plasma processing device. A liquid-phase or gas-phase coolant flows through the coolant channel (145) without changing phase. For at least part of the coolant channel (145), which extends along the side wall (140) in the circumferential direction, the cross-sectional area gradually decreases in the downstream direction. Decreasing the cross-sectional area of the coolant channel (145) increases the flow rate of the coolant and increases the heat-transfer coefficient. By gradually decreasing the cross-sectional area of the cooling channel (145) in the downstream direction, a decrease in temperature differential accompanying an increase in the temperature of the coolant can be made up for by the increase in heat-transfer coefficient, and the amount of heat transferred can be kept roughly constant along the length of the coolant channel (145). Thus, a planar antenna (905) or dielectric window (105) can be cooled uniformly in the circumferential direction.

Description

technical field [0001] The present invention relates to a plasma processing apparatus for performing plasma processing on objects to be processed such as semiconductor wafers, liquid crystal substrates, and organic EL elements. Background technique [0002] In recent years, high-speed processing, lower power consumption, and the like are required for semiconductor devices that are used everywhere in daily life. In order to satisfy the above-mentioned requirements, semiconductor devices need to be highly integrated and miniaturized. With the high integration and miniaturization of semiconductor devices, it is required for semiconductor device manufacturing equipment to process fine structures on semiconductor substrates in a low-damage manner. [0003] As a plasma processing apparatus capable of performing processing with low damage, a microwave plasma processing apparatus capable of generating low-electron temperature and high-density plasma has attracted attention. In mic...

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Problems solved by technology

[0010] However, in the case where the cooling medium flow path is turned back, it is difficult to uniformly cool the planar antenna over the entire circumference even if a specific part of the planar antenna can be uniformly cooled.

In addition, if the cooling medium flow path is turned back, the installation area of ​​the cooling medium flow path will increase, and it will become difficult to install the cooling medium flow path in the narrow side wall of the processing container.

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